CGA-3318 Datasheet, PDF (7/8 Pages) Stanford Microdevices – Dual CATV Broadband High Linearity SiGe HBT Amplifier

CGA-3318 Dual SiGe HBT Amplifier
5 - 100 MHz Application Circuit: V_S=8V, I_D=150mA @ T_L=+25°C, Push-Pull Config.
Gain vs. Frequency
16
Return Loss vs. Frequency
0
-5
14
-10
12
|S ₂₂|
-15
10
-20
|S ₁₁|
8
-25
6
0
22
10 20 30 40 50 60 70 80 90 100
Frequency (MHz)
P 1dB and IP 3 vs. Frequency
40
21
39
20
38
19
37
18
17
16
0
36
P1dB
35
IP3
34
10 20 30 40 50 60 70 80 90 100 110
Frequency (M Hz)
5-100 MHz Application Schematic
Vs
1µF Tant. 0.01µF 1000pF 68pF
RBIAS
-30
0
8
7
6
5
4
3
2
1
0
0
10 20 30 40 50 60 70 80 90 100
Frequency (MHz)
N oise Figure vs. Frequency
10 20 30 40 50 60 70 80 90 100 110
Frequency (MHz)
5-100 MHz Evaluation Board Layout
Rbias
Macom
ETC1-1T
1
0.01 µF
2,3
Amp 1
10 µΗ
8
0.01 µF
6,7
0.01 µF
4
Amp 2
Macom
0.01 µF ETC1-1T
5
CGA-3318
SOIC-08
10 µΗ
1µF Tant. 0.01µF 1000pF 68pF
RBIAS
Vs
RF INPUT
Balun ETC1-1T _0.01uF
1uF Tant.
10uH
RF OUTPUT
.01uF
1000pF
68pF
0.01uF ^{Balun ETC1-1T}
0.01uF
10uH
1uF Tant.
Rbias
0.01uF
68pF
1000pF
.01uF
ECB-101611 Rev A
ESOP-8
Push-Pull
Eval Board
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC
7
http://www.sirenza.com
EDS-101993 Rev G