CGA-3318 Datasheet, PDF (2/8 Pages) Stanford Microdevices – Dual CATV Broadband High Linearity SiGe HBT Amplifier

CGA-3318 Dual SiGe HBT Amplifier
Absolute Maximum Ratings
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I_DV_D < (T_J - T_L) / R_TH, j-l
Parameter
Max. Device Current (I_D)
Max. Device Voltage (V_D)
Max. RF Input Power
Max. Junction Temp. (T_J)
Operating Temp. Range (T_L)
Max. Storage Temp.
Absolute Limit
225 mA
7V
+18 dBm
+150°C
-40°C to +85°C
+150°C
Typical RF Performance: V_S=8V, I_D=150mA @ T_L=+25°C, R_BIAS=51 Ohms, Push-Pull Config.
G ain vs. Frequency
16
14
12
10
0
-5
-10
-15
-20
-25
-30
0
8
6
0 100 200
Input Return L oss vs . F requency
-40°C
+25°C
+85°C
300 400 500 600 700 800 900 1000
Frequency (M Hz)
Output Return Loss vs. Frequency
0
-2
-40°C
-4
+25°C
+85°C
-6
-8
-10
-12
-40°C
+25°C
+85°C
100 200 300 400 500 600 700 800 900 1000
Frequency (MHz)
-14
-16
-18
-20
0
100 200 300 400 500 600 700 800 900 1000
Frequency (MHz)
75 Ohm Push Pull S-parameters are available for download at www.sirenza.com
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101993 Rev G