CGA-3318 Datasheet, PDF (5/8 Pages) Stanford Microdevices – Dual CATV Broadband High Linearity SiGe HBT Amplifier

CGA-3318 Dual SiGe HBT Amplifier
Typical RF Performance - Single Ended - 50 Ohm System
V_S=8V, I_D=75mA (one amp biased), T_L=+25°C, R_BIAS=51 Ohms
Gain & Isolation vs. Frequency
16
0
0
14
-4
-5
12
-8
-10
10
-12
-15
8
-16
-20
6
-20
-25
4
-24
Gain (dB)
2
-28
Isolation (dB)
0
-32
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Frequency (GHz)
-30
-35
-40
0.0
0.5
Typical RF Performance - Single Ended - 37.5 Ohm System
V_S=8V, I_D=75mA (one amp biased), T_L=+25°C, R_BIAS=51 Ohms
|S11| & |S22| vs. Frequency
1.0
1.5
2.0
2.5
3.0
Frequency (GHz)
|S11|
|S22|
3.5
4.0
16
14
12
10
8
6
4
2
0
0.0
Gain & Isolation vs. Frequency
Gain (dB)
Isolation (dB)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
0
-4
-8
-12
-16
-20
-24
-28
-32
4.0
|S11| & |S22| vs. Frequency
0
-5
-10
-15
-20
-25
-30
|S11|
-35
|S22|
-40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Frequency (GHz)
50 Ohm and 37.5 Ohm Single Ended S-parameter files are available for download at
www.sirenza.com
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-101993 Rev G