CGA-3318 Datasheet, PDF (1/8 Pages) Stanford Microdevices – Dual CATV Broadband High Linearity SiGe HBT Amplifier

Preliminary
Product Description
Sirenza Microdevice’s CGA-3318 is a high performance Silicon
Germanium HBT MMIC Amplifier. Designed with SiGe process
technology for excellent linearity at an exceptional price. A
Darlington configuration is utilized for broadband performance.
The heterojunction increases breakdown voltage and minimizes
leakage current between junctions. The CGA-3318 contains
two amplifiers for use in wideband Push-Pull CATV amplifiers
requiring excellent second order performance. The second and
third order non-linearities are greatly improved in the push pull
configuration.
Amplifier Configuration
1
8
2
7
3
6
CGA-3318
Dual CATV Broadband High
Linearity SiGe HBT Amplifier
Product Features
• Excellent CSO/CTB/XMOD Performance at
+34 dBmV Output Power per Tone
• Dual Devices in each SOIC-8 Package simplify
Push-Pull configuration PC board layout
• 5 to 900 MHz operation
4
5
ELECTRICAL SPECIFICATIONS
Symbol
Parameter
Applications
• CATV Head End Driver and Predriver Amplifier
• _FC_rA_eqT_.V_(ML_Hin_z)e Dri_Mve_inr_.Ampl_Ti_yfi_pe_.r _{Max. Units}
*5
13.2
G
Small Signal Gain
*See 5-100 MHz Application Circuit, pg. 7.
50
500
12.5
12.5
dB
870
10.0
12.0
OIP2
Output Second Order Intercept Point
Tone Spacing = 1 MHz, Pout per tone = +6 dBm
50
250
500
67.0
69.0
71.5
69.0
dBm
OIP3
Output Third Order Intercept Point
Tone Spacing = 1 MHz, Pout per tone = +6 dBm
50
500
870
36.0
36.5
38.0
38.0
dBm
P1dB
Output Power at 1dB Gain Compression
50
20.0
500
21.0
870
18.6
20.6
dBm
IRL
Input Return Loss
500
50-870
17.0
10
dB
ORL
Output Return Loss
500
50-870
12.0
10
dB
NF
Noise Figure
Balun Insertion Loss Included
50
4.2
500
4.3
dB
870
5.0
6.0
CSO
Worst Case Over Band, 79 Ch., Flat, +34dBmV
70
dBc
CTB
Worst Case Over Band, 79 Ch., Flat, +34dBmV
68
dBc
XMOD
Worst Case Over Band, 79 Ch., Flat, +34dBmV
63
dBc
V_D
Device Operating Voltage
I_D
Device Operating Current
3.9
4.1
4.3
V
135
150
165
mA
R_TH(J-L)
Thermal Resistance (Junction to Lead)
50
°C/W
Test Conditions: V_S = 8 V R_BIAS = 51 Ohms I_D = 150 mA Typ. @ T_L = 25ºC Z_S = Z_L = 75 Ohms Push Pull Application Circuit
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
303 S. Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1
EDS-101993 Rev G