SSM4880AGM Datasheet, PDF (4/5 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

16
14
I _D =13A
V _DS =15V
12
10
8
6
4
2
0
0
10
20
30
40
50
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
1
0.1
T _A =25 ^o C
Single Pulse
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
SSM4880AGM
f=1.0MHz
10000
1000
C _iss
C _oss
C _rss
100
1
6
11
16
21
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125^oC/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
V_DS
90%
10%
V_GS
t_d(on) ^tr
t_{d(off) tf}
V_G
5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
3/08/2005 Rev.2.2
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