SSM4880AGM Datasheet, PDF (3/5 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

50
T _A =25 ^o C
40
30
10V
8.0V
6.0V
5.0V
V _G = 4 .0 V
20
10
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
21
I _D =10A
T _A =25°C
17
13
9
5
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
100
SSM4880AGM
50
T _A =150 ^o C
40
10V
8.0V
6.0V
5.0V
30
V _G = 4 .0 V
20
10
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
1.6
I _D =13A
V _G =10V
1.4
1.2
1
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
3
10
2
T _j =150 ^o C
T _j =25 ^o C
1
1
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0
-50
0
50
100
150
T _j , Junction Temperature( ^o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
3/08/2005 Rev.2.2
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