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| SSM4880AGM Datasheet, PDF (2/5 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT-MODE POWER MOSFET | |||
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SSM4880AGM
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
â BV DSS/âTj
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
30 -
-
- 0.037 -
V
V/°C
RDS(ON)
Static Drain-Source On-Resistance VGS=10V, ID=13A
-
- 9 mâ¦
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25°C)
Drain-Source Leakage Current (Tj=55°C)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=10A
VDS=VGS, ID=250uA
VDS=15V, ID=10A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS= ± 20V
ID=13A
VDS=15V
VGS=5V
VDS=15V
ID=1A
RG=6.2⦠,VGS=10V
RD=15â¦
VGS=0V
VDS=25V
f=1.0MHz
-
- 15 mâ¦
1
-
3V
- 20 - S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 22.5 - nC
- 3.3 - nC
- 15.4 - nC
-
9
- ns
- 16 - ns
- 25 - ns
- 50 - ns
- 813 - pF
- 516 - pF
- 224 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25°C, IS=2.3A, VGS=0V
Min. Typ. Max. Units
-
- 2.3 A
-
- 50 A
-
- 1.3 V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125°C/W when mounted on min. copper pad.
4.Starting Tj=25oC , VDD=25V , L=10mH , RG=25â¦
3/08/2005 Rev.2.2
www.SiliconStandard.com
2 of 5
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