SSM4880AGM Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM4880AGM
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance
Fast switching, planar construction
Simple drive requirement
Description
D
D
D
D
SO-8
G
S
S
S
BV _DSS
R _DS(ON)
I_D
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
G
The SO-8 package is widely preferred for commercial and
industrial surface mount applications and the SSM4880AGM is well suited for
for low-voltage applications such as DC/DC converters.
Pb-free lead finish (second-level interconnect)
30V
9mΩ
13A
D
S^S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
E_AS
I_AR
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy⁴
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
30
±20
13
10
50
2.5
0.02
266
7.3
-55 to 150
-55 to 150
Max.
Value
50
Units
V
V
A
A
A
W
W/°C
mJ
A
°C
°C
Unit
°C/W
3/08/2005 Rev.2.2
www.SiliconStandard.com
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