U634H256 Datasheet, PDF (4/15 Pages) Zentrum Mikroelektronik Dresden AG – POWERSTORE 32K X 8 NVSRAM

U634H256
DC Characteristics
Output High Voltage
Output Low Voltage
Output High Current
Output Low Current
Input Leakage Current
Output Leakage Current
High
Low
High at Three-State- Output
Low at Three-State- Output
Symbol
Conditions
V_OH
V_OL
I_OH
I_OL
I_IH
I_IL
I_OHZ
I_OLZ
V_CC
I_OH
I_OL
V_CC
V_OH
V_OL
V_CC
V_IH
V_IL
V_CC
V_OH
V_OL
= 4.5 V
=-4 mA
= 8 mA
= 4.5 V
= 2.4 V
= 0.4 V
= 5.5 V
= 5.5 V
= 0V
= 5.5 V
= 5.5 V
= 0V
Min.
2.4
8
-1
-1
Max.
Unit
V
0.4
V
-4
mA
mA
1
μA
μA
1
μA
μA
SRAM Memory Operations
No.
Switching Characteristics
Read Cycle
Symbol
Alt.
IEC
1 Read Cycle Time^f
t_AVAV
2 Address Access Time to Data Valid^g
t_AVQV
3 Chip Enable Access Time to Data Valid t_ELQV
4 Output Enable Access Time to Data Valid t_GLQV
5 E HIGH to Output in High-Z^h
t_EHQZ
6 G HIGH to Output in High-Z^h
t_GHQZ
7 E LOW to Output in Low-Z
t_ELQX
8 G LOW to Output in Low-Z
t_GLQX
9 Output Hold Time after Address Change t_AXQX
10 Chip Enable to Power Active^e
t_ELICCH
11 Chip Disable to Power Standby^{d, e}
t_EHICCL
t_cR
t_a(A)
t_a(E)
t_a(G)
t_dis(E)
t_dis(G)
t_en(E)
t_en(G)
t_v(A)
t_PU
t_PD
25
35
45
Unit
Min. Max. Min. Max. Min. Max.
25
35
45
ns
25
35
45 ns
25
35
45 ns
10
15
20 ns
10
13
15 ns
10
13
15 ns
5
5
5
ns
0
0
0
ns
3
3
3
ns
0
0
0
ns
25
35
45 ns
e: Parameter guaranteed but not tested.
f: Device is continuously selected with E and G both LOW.
g: Address valid prior to or coincident with E transition LOW.
h: Measured ± 200 mV from steady state output voltage.
STK Control #ML0048
4
Rev 1.1
August 15, 2006