U630H16P Datasheet, PDF (4/17 Pages) Simtek Corporation – HardStore 2K x 8 nvSRAM

U630H16P
DC Characteristics
Output High Voltage
Output Low Voltage
Output High Current
Output Low Current
Input Leakage Current
Output Leakage Current
High
Low
High at Three-State- Output
Low at Three-State- Output
Symbol
Conditions
V_OH
V_OL
I_OH
I_OL
I_IH
I_IL
I_OHZ
I_OLZ
V_CC
I_OH
I_OL
V_CC
V_OH
V_OL
V_CC
V_IH
V_IL
V_CC
V_OH
V_OL
= 4.5 V
=-4 mA
= 8 mA
= 4.5 V
= 2.4 V
= 0.4 V
= 5.5 V
= 5.5 V
= 0V
= 5.5 V
= 5.5 V
= 0V
Min.
2.4
8
-1
-1
Max.
Unit
V
0.4
V
-4
mA
mA
1
μA
μA
1
μA
μA
SRAM Memory Operations
No.
Switching Characteristics
Read Cycle
Symbol
Alt.
IEC
1 Read Cycle Time^f
2 Address Access Time to Data Valid^g
3 Chip Enable Access Time to Data Valid
4 Output Enable Access Time to Data Valid
5 E HIGH to Output in High-Z^h
6 G HIGH to Output in High-Z^h
7 E LOW to Output in Low-Z
8 G LOW to Output in Low-Z
9 Output Hold Time after Addr. Change^g
10 Chip Enable to Power Active^e
11 Chip Disable to Power Standby^{d, e}
t_AVAV
t_AVQV
t_ELQV
t_GLQV
t_EHQZ
t_GHQZ
t_ELQX
t_GLQX
t_AXQX
t_ELICCH
t_EHICCL
t_cR
t_a(A)
t_a(E)
t_a(G)
t_dis(E)
t_dis(G)
t_en(E)
t_en(G)
t_v(A)
t_PU
t_PD
e: Parameter guaranteed but not tested.
f: Device is continuously selected with E and G both LOW.
g: Address valid prior to or coincident with E transition LOW.
h: Measured ± 200 mV from steady state output voltage.
STK Control #ML0037
4
35
Unit
Min.
Max.
35
ns
35
ns
35
ns
20
ns
17
ns
17
ns
5
ns
0
ns
3
ns
0
ns
35
ns
Rev 1.0
March 31, 2006