SI8630 Datasheet, PDF (9/36 Pages) Silicon Laboratories – Low-Power Triple-Channel Digital Isolators

4. Electrical Specifications
Si8630/31/35 Data Sheet
Electrical Specifications
Table 4.1. Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Ambient Operating Temperature ¹
T_A
–40
25
125 ¹
°C
Supply Voltage
V_DD1
2.5
—
5.5
V
V_DD2
2.5
—
5.5
V
Note:
1. The maximum ambient temperature is dependent on data frequency, output loading, number of operating channels, and supply
voltage.
Table 4.2. Electrical Characteristics ¹
Parameter
Symbol
VDD Undervoltage Threshold
VDD_UV+
VDD Undervoltage Threshold
VDD_UV–
VDD Undervoltage Hysteresis
VDD_HYS
Positive-Going Input Threshold
VT+
Negative-Going Input Threshold
VT–
Input Hysteresis
V_HYS
High Level Input Voltage
V_IH
Low Level Input Voltage
V_IL
High Level Output Voltage
V_OH
Low Level Output Voltage
V_OL
Input Leakage Current
Si863xxA/B/C/D
I_L
Si863xxT
Output Impedance ²
Z_O
Enable Input Current
Si863xxA/B/C/D
I_ENH, I_ENL
Si863xxT
DC Supply Current (All Inputs 0 V or at Supply)
Si8630Bx, Ex, Si8635Bx
V_DD1
V_DD2
V_DD1
V_DD2
Test Condition
V_DD1, V_DD2 rising
V_DD1, V_DD2 falling
All inputs rising
All inputs falling
loh = –4 mA
lol = 4 mA
V_ENx = V_IH or V_IL
V_I = 0(Bx), 1(Ex)
V_I = 0(Bx), 1(Ex)
V_I = 1(Bx), 0(Ex)
V_I = 1(Bx), 0(Ex)
Min
Typ Max Unit
1.95
2.24 2.375
V
1.88
2.16 2.325
V
50
70
95
mV
1.4
1.67
1.9
V
1.0
1.23
1.4
V
0.38
0.44 0.50
V
2.0
—
—
V
—
—
0.8
V
V_DD1, V_DD2 – 0.4 4.8
—
V
—
0.2
0.4
V
—
—
±10
µA
—
—
±15
—
50
—
Ω
—
2.0
—
µA
—
10.0
—
—
0.9
1.6
—
1.9
3.0
mA
—
4.6
7.4
—
1.9
3.0
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