SI8630 Datasheet, PDF (20/36 Pages) Silicon Laboratories – Low-Power Triple-Channel Digital Isolators

Si8630/31/35 Data Sheet
Electrical Specifications
Table 4.6. Insulation and Safety-Related Specifications
Parameter
Symbol
Test Condition
Value
Unit
WB SOIC-16
NB SOIC-16
Nominal Air Gap (Clearance) ¹
L(IO1)
8.0
4.9
mm
Nominal External Tracking ¹
L(IO2)
8.0
4.01
mm
Minimum Internal Gap
0.014
0.014
mm
(Internal Clearance)
Tracking Resistance
(Proof Tracking Index)
PTI
IEC60112
600
600
V_RMS
Erosion Depth
ED
0.019
0.019
mm
Resistance (Input-Output) ²
R_IO
10¹²
10¹²
Ω
Capacitance (Input-Output) ²
C_IO
f = 1 MHz
2.0
2.0
pF
Input Capacitance ³
C_I
4.0
4.0
pF
Note:
1. The values in this table correspond to the nominal creepage and clearance values. VDE certifies the clearance and creepage
limits as 4.7 mm minimum for the NB SOIC-16 package and 8.5 mm minimum for the WB SOIC-16 package. UL does not impose
a clearance and creepage minimum for component-level certifications. CSA certifies the clearance and creepage limits as 3.9 mm
minimum for the NB SOIC-16 and 7.6 mm minimum for the WB SOIC-16 package.
2. To determine resistance and capacitance, the Si86xx is converted into a 2-terminal device. Pins 1–8 are shorted together to form
the first terminal and pins 9–16 are shorted together to form the second terminal. The parameters are then measured between
these two terminals.
3. Measured from input pin to ground.
Parameter
Basic Isolation Group
Installation Classification
Table 4.7. IEC 60664-1 Ratings
Test Conditions
Material Group
Rated Mains Voltages < 150 V_RMS
Rated Mains Voltages < 300 V_RMS
Rated Mains Voltages < 400 V_RMS
Rated Mains Voltages < 600 V_RMS
Specification
WB SOIC-16
NB SOIC-16
I
I
I-IV
I-IV
I-IV
I-III
I-III
I-II
I-III
I-II
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