SI8630 Datasheet, PDF (21/36 Pages) Silicon Laboratories – Low-Power Triple-Channel Digital Isolators

Si8630/31/35 Data Sheet
Electrical Specifications
Table 4.8. IEC 60747-5-5 Insulation Characteristics for Si86xxxx ¹
Parameter
Symbol
Test Condition
Characteristic
Unit
WB SOIC-16 NB SOIC-16
Maximum Working
Insulation Voltage
V_IORM
1200
630
Vpeak
Input to Output Test
V_PR
Voltage
Method b1
(V_IORM x 1.875 = VPR, 100%
2250
1182
Vpeak
Production Test, t_m = 1 sec,
Partial Discharge < 5 pC)
Transient Overvolt-
age
V_IOTM
t = 60 sec
6000
6000
Vpeak
Tested per IEC 60065 with surge voltage of 1.2 µs/50 µs
Surge Voltage
V_IOSM
Si863xxT tested with magnitude 6250 V x 1.6 = 10 kV
6250
—
Vpeak
Si863xxB/C/D tested with 4000 V
4000
4000
Pollution Degree
2
2
(DIN VDE 0110, Ta-
ble 1)
Insulation Resist-
R_S
ance at T_S, V_IO =
500 V
>10⁹
>10⁹
Ω
Note:
1. Maintenance of the safety data is ensured by protective circuits. The Si86xxxx provides a climate classification of 40/125/21.
Table 4.9. IEC Safety Limiting Values ¹
Parameter
Symbol
Test Condition
Max
Unit
WB SOIC-16 NB SOIC-16
Case Temperature
T_S
150
150
°C
Safety Input, Output, or Supply Current
I_S
θ_JA = 100 °C/W (WB SOIC-16)
220
210
mA
105 °C/W (NB SOIC-16)
Device Power Dissipation ²
V_I = 5.5 V, T_J = 150 °C, T_A = 25 °C
P_D
275
275
mW
Note:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figure 4.4 (WB SOIC-16) Thermal Derat-
ing Curve, Dependence of Safety Limiting Values with Case Temperature per DIN EN 60747-5-5/VDE 0884-10, as Applies on
page 21 and Figure 4.5 (NB SOIC-16) Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature
per DIN EN 60747-5-5/VDE 0884-10, as Applies on page 21.
2. The Si86xx is tested with VDD1 = VDD2 = 5.5 V; T_J = 150 ºC; C_L = 15 pF, input a 150 Mbps 50% duty cycle square wave.
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