SI871X Datasheet, PDF (8/35 Pages) Silicon Laboratories – Industrial automation

Si871x/2x
Table 3. Regulatory Information*
CSA
The Si871x/2x is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873.
61010-1: Up to 600 V_RMS reinforced insulation working voltage; up to 600 V_RMS basic insulation working voltage.
60950-1: Up to 1000 V_RMS reinforced insulation working voltage; up to 1000 V_RMS basic insulation working
voltage.
60601-1: Up to 250 V_RMS reinforced insulation working voltage; up to 500 V_RMS basic insulation working voltage.
VDE
The Si871x/2x is certified according to IEC60747 and VDE0884. For more details, see File 5006301-4880-0001.
60747-5-2: Up to 1414 V_peak for basic insulation working voltage.
VDE0884-10: Up to 1414 V_peak for reinforced insulation working voltage.
UL
The Si871x/2x is certified under UL1577 component recognition program. For more details, see File E257455.
Rated up to 5000 V_RMS isolation voltage for basic protection.
CQC
The Si871x/2x is certified under GB4943.1-2011. For more details, see File V2012CQC001041.
Rated up to 1000 V_RMS reinforced insulation working voltage; up to 1000 V_RMS basic insulation working voltage.
*Note: Regulatory Certifications apply to 3.75 kV_RMS rated devices which are production tested to 4.5 kV_RMS for 1 sec.
Regulatory Certifications apply to 5.0 kV_RMS rated devices which are production tested to 6.0 kV_RMS for 1 sec.
For more information, see "8.Ordering Guide" on page 22.
Table 4. Insulation and Safety-Related Specifications
Parameter
Value
Symbol Test Condition
Unit
SOIC-8 DIP8
SDIP6
Nominal Air Gap (Clearance)
L(IO1)
4.7 min 7.2 min 9.6 min mm
Nominal External Tracking
(Creepage)
L(IO2)
3.9 min 7.0 min 8.3 min mm
Minimum Internal Gap
(Internal Clearance)
Tracking Resistance
(Proof Tracking Index)
0.016
0.016
0.016
mm
PTI
IEC60112
600
600
600
V
Erosion Depth
ED
0.031
0.031
0.057
mm
Resistance (Input-Output)*
R_IO
10¹²
10¹²
10¹²

Capacitance (Input-Output)*
C_IO
f = 1 MHz
1
1
1
pF
*Note: To determine resistance and capacitance, the Si871x/2x is converted into a 2-terminal device. Pins 1–4 (1–3, SDIP6)
are shorted together to form the first terminal, and pins 5–8 (4–6, SDIP6) are shorted together to form the second
terminal. The parameters are then measured between these two terminals.
8
Rev. 1.0