SI871X Datasheet, PDF (4/35 Pages) Silicon Laboratories – Industrial automation

Si871x/2x
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
V_DD Supply Voltage
Input Current
Operating Temperature (Ambient)
Symbol
Min
Typ
Max
Unit
V_DD
2.5
—
5.5
V
I_F(ON)
6
(See Figure 1)
—
30
mA
T_A
–40
—
125
°C
Table 2. Electrical Characteristics
V_DD = 5 V; GND = 0 V; T_A = –40 to +125 °C; typical specs at 25 °C
Parameter
Symbol
Test Condition
Min
DC Parameters
Supply Voltage
V_DD (V_DD–GND)
2.5
Supply Current
I_DD Output high or low
—
(V_DD = 2.5 to 5.5 V)
Input Current Threshold I_F(TH)
—
Input Current
I_HYS
—
Hysteresis
Input Forward Voltage V_F(OFF) Measured at ANODE with respect to
—
(OFF)
CATHODE.
Input Forward Voltage V_F(ON) Measured at ANODE with respect to 1.4
(ON)
CATHODE.
Input Capacitance
C_I f = 100 kHz,
V_F = 0 V,
—
V_F = 2 V
—
Logic Low Output
V_OL I_OL = 4 mA
—
Voltage
Logic High Output
Voltage
V_OH I_OH = –4 mA
V_DD - 0.4
Output Impedance
Enable High Min
Enable Low Max
Enable High Current
Draw
Z_O
V_EH
V_EL
I_EH
V_DD = V_EH = 5 V
—
V_DD - 0.4
—
—
Enable Low Current
I_EL V_DD =5 V, V_EL = 0 V
—
Draw
UVLO Threshold +
VDD_UV+
See Figure 8 on page 16.
—
V_DD rising
UVLO Threshold –
VDD_UV–
See Figure 8 on page 16.
—
V_DD falling
UVLO lockout
hysteresis
VDD_HYS
50
Typ
—
1.5
—
0.34
—
—
15
15
0.2
V_DD -
0.2
50
—
—
0
–30
2.2
2
100
Max Unit
5.5
V
—
mA
3.6
mA
—
mA
1
V
2.8
V
—
pF
—
pF
0.4
V
—
V
—

—
V
0.4
V
—
µA
0
µA
2.35
V
2.25
V
—
mV
4
Rev. 1.0