SI824X Datasheet, PDF (6/30 Pages) Silicon Laboratories – CLASS D AUDIO DRIVER WITH PRECISION DEAD-TIME GENERATOR

Si824x
Table 1. Electrical Characteristics¹ (Continued)
4.5 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C
Parameter
Symbol
Test Conditions
VDDI Undervoltage Threshold
VDDI Undervoltage Threshold
VDDI Lockout Hysteresis
VDDA, VDDB Undervoltage
Threshold
8 V Threshold
VDDI_UV+
VDDI_UV–
VDDI_HYS
VDDA_UV+,
VDDB_UV+
VDDI rising
VDDI falling
VDDA, VDDB rising
See Figure 35 on page 21.
10 V Threshold
See Figure 36 on page 21.
VDDA, VDDB Undervoltage
Threshold
8 V Threshold
VDDA_UV–,
VDDB_UV–
VDDA, VDDB falling
See Figure 35 on page 21.
10 V Threshold
See Figure 36 on page 21.
VDDA, VDDB
Lockout Hysteresis
VDDA, VDDB
Lockout Hysteresis
VDDA_HYS,
VDDB_HYS
VDDA_HYS,
VDDB_HYS
UVLO voltage = 8 V
UVLO voltage = 10 V
AC Specifications
Minimum Pulse Width
Propagation Delay
Pulse Width Distortion
|t_PLH - t_PHL|
Programmed Dead Time²
t_PHL, t_PLH
PWD
DT
CL = 1 nF
See Figures 37 and 38
Output Rise and Fall Time
Shutdown Time from
Disable True
Restart Time from
Disable False
Device Start-up Time
t_R,t_F
t_SD
t_RESTART
t_START
C_L = 1 nF (Si8241)
C_L = 1 nF (Si8244)
Time from VDD_ = VDD_UV+
to VOA, VOB = VIA, VIB
Common Mode
Transient Immunity
CMTI
VIA, VIB, PWM = VDDI or 0 V
V_CM = 1500 V (see Figure 4)
Notes:
1. VDDA = VDDB = 12 V for 8 V UVLO and 10 V UVLO devices.
2. The largest RDT resistor that can be used is 220 k.
Min
3.60
3.30
—
7.50
9.60
7.20
9.40
—
—
—
—
—
0.4
—
—
—
—
—
25
Typ Max Units
4.0 4.45 V
3.70 4.15 V
250 — mV
8.60 9.40 V
11.1 12.2 V
8.10 8.70 V
10.1 10.9 V
600 — mV
1000 — mV
10
—
ns
25
60
ns
1.0 5.60 ns
— 1000 ns
—
20
ns
—
12
ns
—
60
ns
—
60
ns
5
7
µs
45
— kV/µs
6
Rev. 1.0