SI824X Datasheet, PDF (10/30 Pages) Silicon Laboratories – CLASS D AUDIO DRIVER WITH PRECISION DEAD-TIME GENERATOR

Si824x
Table 5. IEC 60747-5-2 Insulation Characteristics*
Parameter
Symbol
Test Condition
Characteristic
Unit
NB SOIC-16
Maximum Working Insulation Voltage
Input to Output Test Voltage
V_IORM
V_PR
Method b1
(V_IORM x 1.875 = V_PR,
100%
Production Test, t_m = 1 sec,
Partial Discharge < 5 pC)
560
1050
V peak
V peak
Transient Overvoltage
V_IOTM
t = 60 sec
4000
V peak
Pollution Degree
(DIN VDE 0110, Table 1)
2
Insulation Resistance at T_S,
V_IO = 500 V
R_S
>10⁹

*Note: Maintenance of the safety data is ensured by protective circuits. The Si824x provides a climate classification of
40/125/21.
Table 6. IEC Safety Limiting Values¹
Parameter
Symbol
Test Condition
NB SOIC-16 Unit
Case Temperature
T_S
Safety Input Current
I_S
Device Power Dissipation²
P_D
_JA = 105 °C/W (NB SOIC-16),
V_DDI = 5.5 V,
V_DDA = V_DDB= 24 V,
T_J = 150 °C, T_A = 25 °C
150
°C
50
mA
1.2
W
Notes:
1. Maximum value allowed in the event of a failure. Refer to the thermal derating curve in Figure 5.
2. The Si82xx is tested with V_DDI = 5.5 V, V_DDA = V_DDB = 24 V, T_J = 150 ºC, C_L = 100 pF, input 2 MHz 50% duty cycle
square wave.
10
Rev. 1.0