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SI597 Datasheet, PDF (3/12 Pages) Silicon Laboratories – QUAD FREQUENCY VOLTAGE-CONTROLLED CRYSTAL | |||
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Si597
Table 3. CLK± Output Frequency Characteristics
Parameter
Symbol
Test Condition
Min
Nominal Frequency1,2,3
fO
LVDS/CML/LVPECL
10
CMOS
10
Temperature Stability1,4
TA = â40 to +85 ºC
â20
â50
Absolute Pull Range1,4
APR
VDD = 3.3 V
±15
Power up Time5
tOSC
â
Notes:
1. See Section 3. "Ordering Information" on page 7 for further details.
2. Specified at time of order by part number.
3. Nominal output frequency set by VCNOM = VDD/2.
4. Selectable parameter specified by part number. See âOrdering Informationâ.
5. Time from power up or tristate mode to fO.
Typ
Max Unit
â
810 MHz
â
160 MHz
â
+20 ppm
â
+50 ppm
â
±370 ppm
â
10
ms
Table 4. CLK± Output Levels and Symmetry
Parameter
LVPECL Output Option1
LVDS Output Option2
Symbol
VO
VOD
VSE
VO
Test Condition
mid-level
swing (diff)
swing (single-ended)
mid-level
Min
VDD â 1.42
1.1
0.55
1.125
Typ
â
â
â
1.20
Max Unit
VDD â 1.25 V
1.9
VPP
0.95
VPP
1.275
V
VOD
swing (diff)
0.5
0.7
0.9
VPP
CML Output Option2
VO
2.5/3.3 V option mid-level
â
VDD â 1.30
â
V
1.8 V option mid-level
â
VDD â 0.36
â
VPP
VOD 2.5/3.3 V option swing (diff)
1.10
1.50
1.90
V
CMOS Output Option3
1.8 V option swing (diff)
0.35
0.425
0.50
VPP
VOH
0.8 x VDD
â
VDD
V
VOL
â
â
0.4
V
Rise/Fall time (20/80%)
tR, tF
LVPECL/LVDS/CML
â
â
350
ps
CMOS with CL = 15 pF
â
2
â
ns
Symmetry (duty cycle)
SYM LVPECL: VDD â 1.3 V (diff)
LVDS: 1.25 V (diff)
45
â
55
%
CMOS: VDD/2
Notes:
1. 50 ï to VDD â 2.0 V.
2. Rterm = 100 ï (differential).
3. CL = 15 pF. Sinking or sourcing 12 mA for VDD = 3.3 V, 6 mA for VDD = 2.5 V, 3 mA for VDD = 1.8 V.
Rev. 1.0
3
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