EFM32PG1 Datasheet, PDF (24/94 Pages) Silicon Laboratories – Industrial and factory automation

Parameter
Output rise time, From 30%
to 70% of V_IO
Symbol
t_IOOR
Note:
1. In GPIO_Pn_CTRL register
Test Condition
Min
C_L = 50pF,
-
DRIVESTRENGTH¹ = STRONG,
SLEWRATE = 0x6¹
C_L = 50pF,
-
DRIVESTRENGTH¹ = WEAK,
SLEWRATE¹ = 0x6
EFM32PG1 Data Sheet
Electrical Specifications
Typ
TBD
Max
Unit
-
ns
TBD
-
ns
4.1.10 VMON
Table 4.16. VMON
Parameter
VMON Supply Current
Symbol
I_VMON
VMON Loading of Monitored I_SENSE
Supply
Threshold range
Threshold step size
V_{VMON_RANGE}
N_{VMON_STESP}
Response time
Hysteresis
t_{VMON_RES}
V_{VMON_HYST}
Test Condition
In EM0 or EM1, 1 supply moni-
tored
In EM0 or EM1, 4 supplies moni-
tored
In EM2, EM3 or EM4, 1 supply
monitored
In EM2, EM3 or EM4, 4 supplies
monitored
In EM0 or EM1
In EM2, EM3 or EM4
Coarse
Fine
Supply drops at 1V/μs rate
Min
-
-
-
-
-
-
TBD
-
-
-
-
Typ
5.8
11.8
62
99
2
2
-
200
20
500
26
Max
Unit
-
μA
-
μA
-
nA
-
nA
-
μA
-
nA
TBD
V
-
mV
-
mV
-
ns
-
mV
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