EFM32G840F128 Datasheet, PDF (20/71 Pages) Silicon Laboratories – ARM Cortex-M3 CPU platform

...the world's most energy friendly microcontrollers
3.8 General Purpose Input Output
Table 3.8. GPIO
Symbol
V_IOIL
V_IOIH
V_IOOH
V_IOOL
I_IOLEAK
R_PU
R_PD
R_IOESD
t_IOGLITCH
t_IOOF
V_IOHYST
Parameter
Condition
Min
Typ
Input low voltage
Input high voltage
Sourcing 6 mA, V_DD=1.85 V,
GPIO_Px_CTRL DRIVEMODE
= STANDARD
0.7V_DD
0.75V_DD
Output high voltage
Sourcing 6 mA, V_DD=3.0 V,
GPIO_Px_CTRL DRIVEMODE
= STANDARD
Sourcing 20 mA, V_DD=1.85 V,
GPIO_Px_CTRL DRIVEMODE
= HIGH
0.95V_DD
0.7V_DD
Sourcing 20 mA, V_DD=3.0 V,
GPIO_Px_CTRL DRIVEMODE
= HIGH
0.9V_DD
Sinking 6 mA, V_DD=1.85 V,
GPIO_Px_CTRL DRIVEMODE
= STANDARD
Output low voltage
Sinking 6 mA, V_DD=3.0 V,
GPIO_Px_CTRL DRIVEMODE
= STANDARD
Sinking 20 mA, V_DD=1.85 V,
GPIO_Px_CTRL DRIVEMODE
= HIGH
Sinking 20 mA, V_DD=3.0 V,
GPIO_Px_CTRL DRIVEMODE
= HIGH
Input leakage cur-
rent
High Impedance IO connected
to GROUND or V_DD
I/O pin pull-up resis-
tor
I/O pin pull-down re-
sistor
Internal ESD series
resistor
Pulse width of puls-
10
es to be removed
by the glitch sup-
pression filter
Output fall time
I/O pin hysteresis
(V_IOTHR+ - V_IOTHR-)
0.5 mA drive strength and load
capacitance C_L=12.5-25pF.
2mA drive strength and load
capacitance C_L=350-600pF
V_DD = 1.85 - 3.8 V
20+0.1C_L
20+0.1C_L
0.1V_DD
Max
Unit
0.3V_DD V
V
V
V
V
V
0.25V_DD V
0.05V_DD V
0.3V_DD V
0.1V_DD V
+/-25 nA
40
kOhm
40
kOhm
200
Ohm
50 ns
250 ns
250 ns
V
2013-11-22 - EFM32G840FXX - d0008_Rev1.71
20
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