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SI595 Datasheet, PDF (2/12 Pages) Silicon Laboratories – VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR
Si595
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Symbol Test Condition
Min
Typ
Max Units
Supply Voltage1
VDD
3.3 V option
2.5 V option
2.97
3.3
3.63
2.25
2.5
2.75
V
1.8 V option
1.71
1.8
1.89
Supply Current
IDD
Output enabled
LVPECL
—
120
135
CML
LVDS
—
110
120
—
100
110
mA
CMOS
—
90
100
Tristate mode
—
60
75
Output Enable (OE)2
VIH
0.75 x VDD
—
—
V
VIL
—
—
0.5
Operating Temperature Range
TA
–40
—
85
°C
Notes:
1. Selectable parameter specified by part number. See 3. "Ordering Information" on page 7 for further details.
2. OE pin includes an internal 17 k pullup resistor to VDD for output enable active high or a 17 k pull-down resistor to
GND for output enable active low. See 3. "Ordering Information" on page 7.
Table 2. VC Control Voltage Input
Parameter
Symbol Test Condition
Min
Typ
Max Units
Control Voltage Tuning Slope1,2,3
KV
10 to 90% of VDD
—
45
—
ppm/V
95
125
185
380
Control Voltage Linearity4
LVC
BSL
–5
±1
+5
%
Incremental
–10
±5
+10
Modulation Bandwidth
BW
9.3
10.0
10.7
kHz
VC Input Impedance
ZVC
500
—
—
k
VC Input Capacitance
CVC
—
50
—
pF
Nominal Control Voltage
VCNOM
@ fO
—
VDD/2
—
V
Control Voltage Tuning Range
VC
0
VDD
V
Notes:
1. Positive slope; selectable option by part number. See 3. "Ordering Information" on page 7.
2. For best jitter and phase noise performance, always choose the smallest KV that meets the application’s minimum APR
requirements. See “AN266: VCXO Tuning Slope (KV), Stability, and Absolute Pull Range (APR)” for more information.
3. KV variation is ±10% of typical values.
4. BSL determined from deviation from best straight line fit with VC ranging from 10 to 90% of VDD. Incremental slope
determined with VC ranging from 10 to 90% of VDD.
2
Rev. 1.2