SI846X Datasheet, PDF (18/36 Pages) Silicon Laboratories – LOW POWER SIX-CHANNEL DIGITAL ISOLATOR

Si8460/61/62/63
Table 9. IEC 60747-5-2 Insulation Characteristics for Si84xxxB*
Parameter
Symbol
Test Condition
Characteristic Unit
Maximum Working Insulation Voltage
Input to Output Test Voltage
V_IORM
V_PR
Method b1
(V_IORM x 1.875 = V_PR, 100%
Production Test, t_m =1 sec,
Partial Discharge < 5 pC)
560
1050
V peak
V peak
Transient Overvoltage
V_IOTM
t = 60 sec
4000
V peak
Pollution Degree (DIN VDE 0110, Table 1)
2
Insulation Resistance at T_S, V_IO = 500 V
R_S
>10⁹

d _{*Note: Maintenance of the safety data is ensured by protective circuits. The Si84xx provides a climate classification of}
e _40/125/21.
d _{Table 10. IEC Safety Limiting Values1}
en _{ns Parameter}
Symbol
Test Condition
Max
Min Typ
Unit
NB SOIC-16
m _{ig Case Temperature}
T_S
——
150
°C
m ^{s Safety input, output, or}
supply current
I_S
_JA = 105 °C/W (NB SOIC-16),
——
215
mA
V_I =5.5 V, T_J =150 °C, T_A = 25 °C
o ^e _{Device Power Dissipation}2
P_D
——
415
mW
c D Notes:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figure 2.
e _{2. The Si846x is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle square}
Not ^{Rfor New wave.}
18
Rev. 1.5