SI846X Datasheet, PDF (17/36 Pages) Silicon Laboratories – LOW POWER SIX-CHANNEL DIGITAL ISOLATOR

Si8460/61/62/63
Table 7. Insulation and Safety-Related Specifications
Parameter
Nominal Air Gap (Clearance)¹
Nominal External Tracking (Creepage)¹
Symbol
L(IO1)
L(IO2)
Value
Test Condition
Unit
NB SOIC-16
3.9 min
mm
3.9 min
mm
Minimum Internal Gap (Internal Clearance)
0.008
mm
Tracking Resistance
(Proof Tracking Index)
PTI
IEC60112
600
V_RMS
Erosion Depth
ED
0.019
mm
d _{Resistance (Input-Output)2}
e _{Capacitance (Input-Output)}2
d _{Input Capacitance}³
R_IO
10¹²

C_IO
f = 1 MHz
2.0
pF
C_I
4.0
pF
n Notes:
s _{1. The values in this table correspond to the nominal creepage and clearance values as detailed in “6. Package Outline:}
e _{16-Pin Narrow Body SOIC”. VDE certifies the clearance and creepage limits as 4.7 mm minimum for the NB SOIC-16}
n _{package. UL does not impose a clearance and creepage minimum for component level certifications. CSA certifies the}
m _ig ^{clearance and creepage limits as 3.9 mm minimum for the NB SOIC-16 package.}
2. To determine resistance and capacitance, the Si84xx is converted into a 2-terminal device. Pins 1–8 are shorted
together to form the first terminal and pins 9–16 are shorted together to form the second terminal. The parameters are
m ^{s then measured between these two terminals.}
3. Measured from input pin to ground.
co ^De _{Table 8. IEC 60664-1 (VDE 0844 Part 2) Ratings}
e _Parameter
R ^{w Basic Isolation Group}
Not _for ^{Ne Installation Classification}
Test Condition
Material Group
Rated Mains Voltages < 150 V_RMS
Rated Mains Voltages < 300 V_RMS
Rated Mains Voltages < 400 V_RMS
Rated Mains Voltages < 600 V_RMS
Specification
I
I-IV
I-III
I-II
I-II
Rev. 1.5
17