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SI846X Datasheet, PDF (10/36 Pages) Silicon Laboratories – LOW POWER SIX-CHANNEL DIGITAL ISOLATOR
Si8460/61/62/63
Table 4. Electrical Characteristics (Continued)
(VDD1 = 3.3 V±10%, VDD2 = 3.3 V±10%, TA = –40 to 125 °C; applies to narrow-body SOIC package)
Parameter
Symbol Test Condition
Min
Typ
Max Unit
1 Mbps Supply Current (All inputs = 500 kHz square wave, CI = 15 pF on all outputs)
Si8460Ax, Bx
VDD1
VDD2
—
4.7
7.1
mA
—
4.0
6.0
Si8461Ax, Bx
VDD1
—
4.7
7.1
mA
VDD2
—
4.5
6.8
Si8462Ax, Bx
d VDD1
VDD2
—
4.7
7.1
mA
—
4.3
6.5
e Si8463Ax, Bx
d VDD1
VDD2
—
4.7
7.1
mA
—
4.7
7.1
n s 10 Mbps Supply Current (All inputs = 5 MHz square wave, CI = 15 pF on all outputs)
e n Si8460Bx
VDD1
m ig VDD2
—
4.7
7.1
mA
—
5.5
7.7
Si8461Bx
m s VDD1
o e VDD2
—
5.0
7.2
mA
—
5.7
8.0
Si8462Bx
c D VDD1
VDD2
—
5.2
7.3
mA
—
5.4
7.6
e Si8463Bx
R w VDD1
t e VDD2
—
5.5
7.7
mA
—
5.5
7.7
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination of the
o N value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
N r impedance PCB traces.
fo 2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
10
Rev. 1.5