SI8285 Datasheet, PDF (17/32 Pages) Silicon Laboratories – System Safety Features

Si8285/86 Data Sheet
Electrical Specifications
0.1uF
+3.3V
10mA
0.1uF
IN+
IN-
VDDA
GNDA
/RST
/FLT
NC
NC
VMID
NC
DSAT
VDDB
VDDB
VO
VSSB
VSSB
0.1uF 15V
SWEEP
0.1uF
0.1uF ^15V
Si828x
Figure 4.3. Si828x DSAT Threshold Test Circuit
Table 4.2. Absolute Maximum Ratings¹
Parameter
Symbol
Min
Max
Unit
Storage Temperature
T_STG
–65
+150
°C
Operating Temperature
T_A
–40
+125
°C
Junction Temperature
T_J
—
+150
°C
Peak Output Current (t_PW = 10 µs)
I_OPK
—
4.0
A
Supply Voltage
VDD
–0.5
36
V
Output Voltage
V_OUT
–0.5
36
V
Input Power Dissipation
P_I
—
100
mW
Output Power Dissipation
P_O
—
800
mW
Total Power Dissipation (All Packages Limited by Thermal
Derating Curve)
P_T
—
900
mW
Lead Solder Temperature (10 s)
—
260
°C
HBM Rating ESD
4
—
kV
Machine Model ESD
300
—
V
CDM
2000
—
V
Maximum Isolation (Input to Output) (1 sec) WB SOIC-16
—
6500
V_RMS
Note:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be restricted to
the conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for ex-
tended periods may affect device reliability.
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