SI8285 Datasheet, PDF (14/32 Pages) Silicon Laboratories – System Safety Features

4. Electrical Specifications
Si8285/86 Data Sheet
Electrical Specifications
Table 4.1. Electrical Specifications
V_DDA = 2.8 V – 5.5 V (See Figure 3.1 for Si8285, Figure 3.2 for Si8286); T_A = –40 to +125 °C unless otherwise noted.
Parameter
DC Parameters
Input Supply Voltage
Driver Supply Voltage
Input Supply Quiescent Current
Input Supply Active Current
Output Supply Quiescent Current
(Si8285)
Output Supply Quiescent Current
(Si8286)
Drive Parameters
High Drive Transistor RDS(ON)
Low Drive Transistor RDS(ON)
High Drive Peak Output Current
Symbol
VDDA
(VDDB – VSSB)
(VMID – VSSB)
IDDA(Q)
IDDA
IDDB(Q)
R_OH
R_OL
I_OH
Low Drive Peak Output Current
I_OL
UVLO Parameters
UVLO Threshold +
UVLO Threshold –
UVLO Lockout Hysteresis– (Input Side)
UVLO Threshold + (Driver Side)
9 V Threshold (Si828xBD)
12 V Threshold (Si828xCD)
UVLO Threshold – (Driver Side)
9 V Threshold (Si828xBD)
12 V Threshold (Si828xCD)
UVLO lockout hysteresis (Driver Side)
UVLO+ to RDY High Delay
ULVO– to RDY Low Delay
Desaturation Detector Parameters
VDDA_UV+
VDDA_UV–
VDDA_HYS
VDDB_UV+
VDDB_UV–
VDDB_HYS
t_{UVLO+ to RDY}
t_{UVLO– to RDY}
DESAT Threshold
VDESAT
Test Condition
f = 10 kHz
VH = VDDB – 15 V
T_{PW_IOH} < 250 ns
VL = VSSB + 6.0 V
T_{PW_IOL}< 250 ns
VDDB – VSSB >
VDDBUV+
Min
Typ Max
2.8
—
5.5
9.5
—
30
0
—
15
—
2.6
3.7
—
5.2
—
—
5.3
6.5
—
3.5
4.5
—
2.48
—
—
0.86
—
2.5
2.8
—
3.0
3.4
—
2.4
2.7
3.0
2.3
2.6
2.9
—
100
—
8.0
9.0
10.0
10.8
12.0 13.2
7.0
8.0
9.0
9.8
11.0 12.2
—
1
—
—
100
—
0.79
6.5
6.9
7.3
Units
V
V
V
mA
mA
mA
mA
Ω
Ω
A
A
mV
V
V
V
V
V
µs
µs
V
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