SI845X Datasheet, PDF (16/36 Pages) Silicon Laboratories – LOW POWER FIVE-CHANNEL DIGITAL ISOLATOR

Si8450/51/52/55
Table 8. IEC 60664-1 (VDE 0844 Part 2) Ratings
Parameter
Test Condition
Specification
Basic Isolation Group
Material Group
I
Rated Mains Voltages < 150 V_RMS
I-IV
Rated Mains Voltages < 300 V_RMS
I-III
Installation Classification
Rated Mains Voltages < 400 V_RMS
I-II
Rated Mains Voltages < 600 V_RMS
I-II
Table 9. IEC 60747-5-2 Insulation Characteristics for Si84xxxB*
d _Parameter
Symbol
Test Condition
Characteristic Unit
e _{Maximum Working Insulation Voltage}
end _ns ^{Input to Output Test Voltage}
V_IORM
V_PR
Method b1
(V_IORM x 1.875 = V_PR, 100%
Production Test, t_m =1 sec,
Partial Discharge < 5 pC)
560
1050
V peak
V peak
m _ig ^{Transient Overvoltage}
V_IOTM
t = 60 sec
4000
V peak
Pollution Degree (DIN VDE 0110, Table 1)
2
m ^s _{Insulation Resistance at TS, VIO = 500 V}
R_S
>10⁹

o e *Note: Maintenance of the safety data is ensured by protective circuits. The Si84xx provides a climate classification of
40/125/21.
ec ^D _{Table 10. IEC Safety Limiting Values1}
t ^{R ew Parameter}
o ^{N Case Temperature}
Safety input, output, or
N ^r _{supply current}
fo Device Power Dissipa-
tion²
Symbol
T_S
I_S
P_D
Test Condition
_JA = 105 °C/W (NB SOIC-16),
V_I =5.5 V, T_J =150 °C, T_A = 25 °C
Max
Min Typ
NB SOIC-16
——
150
——
215
——
415
Unit
°C
mA
mW
Notes:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figure 3.
2. The Si845x is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle square
wave.
16
Rev. 1.5