SI8751 Datasheet, PDF (15/27 Pages) Silicon Laboratories – Digital CMOS input option

Si8751/52 Data Sheet
Electrical Specifications
Table 4.8. Absolute Maximum Ratings¹
Parameter
Symbol
Min
Max
Units
Storage Temperature
T_STG
–65
+150
°C
Operating Temperature
T_A
–40
+125
°C
Junction Temperature
T_J
—
+150
°C
Input-side supply voltage (Si8751)
VDD
–0.6
6.0
V
Voltage on any pin with respect to ground (Si8751)
V_IO
–0.5
VDD + 0.5
V
Average Forward Anode Current (Si8752)
I_F(AVG)
—
30
mA
Reverse Anode Voltage (Si8752)
V_R
—
0.3
V
Lead Solder Temperature (10 s)
—
260
°C
HBM Rating ESD
—
3.5
kV
CDM
—
2000
V
Maximum Isolation Voltage (Input to Output) (1 sec)
—
3000
V_RMS
SOIC-8
Latch-up Immunity
—
400
kV/μs
Note:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be restricted to
the conditions specified in the operational sections of this data sheet.
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