SI8751 Datasheet, PDF (12/27 Pages) Silicon Laboratories – Digital CMOS input option

Si8751/52 Data Sheet
Electrical Specifications
Table 4.5. VDE 0884 Insulation Characteristics¹
Parameter
Symbol
Test Condition
Characteristic
Unit
Maximum Working Insulation Voltage
V_IORM
630
V peak
Input to Output Test Voltage
V_PR
Method b1
(V_IORM x 1.875 = V_PR, 100%
Production Test, t_m = 1 sec,
Partial Discharge < 5 pC)
1181
V peak
Transient Overvoltage
V_IOTM
t = 60 sec
4000
V peak
Pollution Degree
2
(DIN VDE 0110, Table 1)
Insulation Resistance at
R_S
T_S, V_IO = 500 V
>10⁹
Ω
Note:
1. Maintenance of the safety data is ensured by protective circuits. The Si875x provides a climate classification of 40/125/21.
Table 4.6. IEC Safety Limiting Values¹
Parameter
Symbol
Test Condition
SOIC-8
Unit
Safety Temperature
T_S
150
°C
Safety Input Current
Ι_S
θ_JA = 110 °C/W
206
mA
(Si8751)
VDD = 5.5 V,
T_J = 150 °C,
T_A = 25 °C
θ_JA = 110 °C/W
313
mA
VDD = 3.63 V,
T_J = 150 °C,
T_A = 25 °C
θ_JA = 110 °C/W
413
mA
VDD = 2.75 V,
T_J = 150 °C,
T_A = 25 °C
Safety Input Current
Ι_S
θ_JA = 110 °C/W
454
mA
(Si8752)
VF = 2.5 V,
T_J = 150 °C,
T_A = 25 °C
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