SI8751 Datasheet, PDF (11/27 Pages) Silicon Laboratories – Digital CMOS input option

Si8751/52 Data Sheet
Electrical Specifications
Table 4.3. Insulation and Safety-Related Specifications
Parameter
Symbol
Test Condition
SOIC-8 Value
Unit
Nominal Air Gap
L(1O1)
4.7
mm
(Clearance)
Nominal External Tracking
L(1O2)
3.9
mm
(Creepage)
Minimum Internal Gap
0.008
mm
(Internal Clearance)
Tracking Resistance
PTI
IEC60112
600
V
(Proof Tracking Index)
Erosion Depth
ED
0.04
mm
Resistance
R_IO
(Input-Output)¹
10¹²
Ω
Capacitance
(Input-Output)¹
C_IO
f = 1 MHz
0.5
pF
Input Capacitance²
C_I
3.0
pF
Notes:
1. To determine resistance and capacitance, the Si875x is converted into a 2-terminal device. All pins on side 1 are shorted to cre-
ate terminal 1, and all pins on side 2 are shorted to create terminal 2. The parameters are then measured between these two
terminals.
2. Measured from input pin to ground.
Table 4.4. IEC 60664-1 Ratings
Parameter
Basic Isolation Group
Installation Classification
Test Condition
Material Group
Rated Mains Voltages < 150 V_RMS
Rated Mains Voltages < 300 V_RMS
Rated Mains Voltages < 400 V_RMS
Rated Mains Voltages < 600 V_RMS
SOIC-8 Specification
I
I-IV
I-III
I-II
I-II
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