SI4438 Datasheet, PDF (10/44 Pages) Silicon Laboratories – Low active power consumption

Si4438
Table 7. Thermal Operating Characteristics
Parameter
Operating Ambient Temperature Range T_A
Thermal Impedance _JA
Junction Temperature T_JMAX
Storage Temperature Range T_STG
Value
–40 to +85
30
+125
–55 to +125
Unit
C
C/W
C
C
Table 8. Absolute Maximum Ratings*
Parameter
V_DD to GND
Instantaneous V_RF-peak to GND on TX Output Pin
Sustained V_RF-peak to GND on TX Output Pin
Voltage on Digital Control Inputs
Voltage on Analog Inputs
Voltage on XIN Input when using a TCXO
RX Input Power
Operating Ambient Temperature Range T_A
Thermal Impedance _JA
Junction Temperature T_J
Storage Temperature Range T_STG
Value
–0.3, +3.6
–0.3, +8.0
–0.3, +6.5
–0.3, V_DD + 0.3
–0.3, V_DD + 0.3
–0.7, V_DD + 0.3
+10
–40 to +85
30
+125
–55 to +125
Unit
V
V
V
V
V
V
dBm
C
C/W
C
C
*Note: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device at or beyond these ratings in the operational sections of
the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability. Power Amplifier may be damaged if switched on without proper load or termination connected. TX
matching network design will influence TX V_RF-peak on TX output pin. Caution: ESD sensitive device.
10
Rev 1.0