S-82B1AAA-I6T1U Datasheet, PDF (8/35 Pages) Seiko Instruments Inc – High-accuracy voltage detection circuit

BATTERY PROTECTION IC WITH CHARGE-DISCHARGE CONTROL FUNCTION FOR 1-CELL PACK
S-82B1A Series
Rev.1.1_00
2. Ta = −40°C to +85°C^*1
Table 9
(Ta = −40°C to +85°C^*1 unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Circuit
Detection Voltage
Overcharge detection voltage
Overcharge release voltage
Overdischarge detection voltage
Overdischarge release voltage
Discharge overcurrent detection voltage 1
Discharge overcurrent detection voltage 2
Load short-circuiting detection voltage
Charge overcurrent detection voltage
Discharge overcurrent release voltage
VCU
VCL
VDL
VDU
VDIOV1
VDIOV2
VSHORT
VCIOV
VRIOV
−
VCL ≠ VCU
VCL = VCU
−
VDL ≠ VDU
VDL = VDU
−
−
−
−
VDD = 3.4 V
VCU − 0.045
VCU
VCU + 0.030 V 1
VCL − 0.080
VCL
VCL + 0.060 V 1
VCL − 0.050
VCL
VCL + 0.030 V 1
VDL − 0.080
VDL
VDL + 0.060 V 2
VDU − 0.130
VDU
VDU + 0.110 V 2
VDU − 0.080
VDU
VDU + 0.060 V 2
VDIOV1 − 0.003 VDIOV1 VDIOV1 + 0.003 V
2
VDIOV2 − 0.005 VDIOV2 VDIOV2 + 0.005 V
2
VSHORT − 0.020 VSHORT VSHORT + 0.020 V
2
VCIOV − 0.003 VCIOV
VCIOV + 0.003 V
2
VDD × 0.77 VDD × 0.8 VDD × 0.83 V 2
0 V Battery Charge Function
0 V battery charge starting charger voltage
V0CHA
0 V battery charge function
"available"
0.0
0.7
1.5
V2
0 V battery charge inhibition battery voltage V0INH
0 V battery charge function
"unavailable"
0.7
1.2
1.7
V2
Internal Resistance
Resistance between VDD pin and VM pin
Resistance between VM pin and VSS pin
CTL pin internal resistance
RVMD
RVMS
RCTL
VDD = 1.8 V, VVM = 0 V
VDD = 3.4 V, VVM = 1.0 V
−
250
3.5
RCTL × 0.25
1000
10
RCTL
3000
kΩ 3
20
kΩ 3
RCTL × 3.0 MΩ 3
Input Voltage
Operation voltage between VDD pin and
VSS pin
VDSOP1
−
1.5
−
6.0
V−
Operation voltage between VDD pin and
VM pin
VDSOP2
−
CTL pin voltage "H"
VCTLH
−
CTL pin voltage "L"
VCTLL
−
1.5
−
28
V−
−
−
VDD × 0.95 V 2
VDD × 0.05
−
−
V2
Input Current
Current consumption during operation
Current consumption during power-down
Current consumption during overdischarge
IOPE
IPDN
IOPED
VDD = 3.4 V, VVM = 0 V
VDD = VVM = 1.5 V
VDD = VVM = 1.5 V
−
2.0
5.0
μA 3
−
−
0.1
μA 3
−
−
1.0
μA 3
Output Resistance
CO pin resistance "H"
CO pin resistance "L"
DO pin resistance "H"
DO pin resistance "L"
RCOH
−
RCOL
−
RDOH
−
RDOL
−
2.5
10
2.5
10
2.5
10
2.5
10
30
kΩ 4
30
kΩ 4
30
kΩ 4
30
kΩ 4
Delay Time
Overcharge detection delay time
tCU
−
tCU × 0.4
tCU
tCU × 2.5
−5
Overdischarge detection delay time
tDL
−
tDL × 0.4
tDL
tDL × 2.5
−5
Discharge overcurrent detection delay time 1 tDIOV1
−
tDIOV1 × 0.4
tDIOV1
tDIOV1 × 2.5
−
5
Discharge overcurrent detection delay time 2 tDIOV2
−
tDIOV2 × 0.4
tDIOV2
tDIOV2 × 2.5
−
5
Load short-circuiting detection delay time tSHORT
−
tSHORT × 0.4
tSHORT
tSHORT × 2.5 −
5
Charge overcurrent detection delay time
tCIOV
−
tCIOV × 0.4
tCIOV
tCIOV × 2.5
−
5
Charge-discharge inhibition delay time
tCTL
−
tCTL × 0.4
tCTL
tCTL × 2.5
−5
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by
design, not tested in production.
8