S-82B1AAA-I6T1U Datasheet, PDF (11/35 Pages) Seiko Instruments Inc – High-accuracy voltage detection circuit

BATTERY PROTECTION IC WITH CHARGE-DISCHARGE CONTROL FUNCTION FOR 1-CELL PACK
Rev.1.1_00
S-82B1A Series
14. DO pin resistance "H"
(Test circuit 4)
The DO pin resistance "H" (R_DOH) is the resistance between VDD pin and DO pin under the set conditions of V1 = 3.4 V,
V2 = V5 = 0 V, V4 = 3.0 V.
15. DO pin resistance "L"
(Test circuit 4)
The DO pin resistance "L" (R_DOL) is the resistance between VSS pin and DO pin under the set conditions of V1 = 1.8 V,
V2 = V5 = 0 V, V4 = 0.4 V.
16. CTL pin voltage "H", CTL pin voltage "L"
(Test circuit 2)
16. 1 CTL pin control logic active "H"
The CTL pin voltage "H" (V_CTLH) is defined as the voltage V5 at which V_CO and V_DO go from "H" to "L" and when the
voltage V5 is gradually increased under the set conditions of V1 = 3.4 V, V2 = V5 = 0 V. After that, the CTL pin voltage
"L" (V_CTLL) is defined as the voltage V5 at which V_CO and V_DO go from "L" to "H" after V5 is gradually decreased.
16. 2 CTL pin control logic active "L"
The CTL pin voltage "L" (V_CTLL) is defined as the voltage difference between the voltage V5 and the voltage V1
(V1 − V5) at which V_DO goes from "H" to "L" when the voltage V5 is gradually increased under the set conditions of V1
= 3.4 V, V2 = V5 = 0 V. After that, the CTL pin voltage "H" (V_CTLH) is defined as the voltage difference between V1 − V5
at which V_CO and V_DO go from "L" to "H" after V5 is gradually decreased.
17. Overcharge detection delay time
(Test circuit 5)
The overcharge detection delay time (t_CU) is the time needed for V_CO to go to "L" just after the voltage V1 increases and
exceeds V_CU under the set conditions of V1 = 3.4 V, V2 = V5 = 0 V.
18. Overdischarge detection delay time
(Test circuit 5)
The overdischarge detection delay time (t_DL) is the time needed for V_DO to go to "L" after the voltage V1 decreases and
falls below V_DL under the set conditions of V1 = 3.4 V, V2 = V5 = 0 V.
19. Discharge overcurrent detection delay time 1
(Test circuit 5)
The discharge overcurrent detection delay time 1 (t_DIOV1) is the time needed for V_DO to go to "L" after the voltage V2
increases and exceeds V_DIOV1 under the set conditions of V1 = 3.4 V, V2 = V5 = 0 V.
20. Discharge overcurrent detection delay time 2
(Test circuit 5)
The discharge overcurrent detection delay time 2 (t_DIOV2) is the time needed for V_DO to go to "L" after the voltage V2
increases and exceeds V_DIOV2 under the set conditions of V1 = 3.4 V, V2 = V5 = 0 V.
21. Load short-circuiting detection delay time
(Test circuit 5)
The load short-circuiting detection delay time (t_SHORT) is the time needed for V_DO to go to "L" after the voltage V2
increases and exceeds V_SHORT under the set conditions of V1 = 3.4 V, V2 = V5 = 0 V.
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