S-82B1AAA-I6T1U Datasheet, PDF (23/35 Pages) Seiko Instruments Inc – High-accuracy voltage detection circuit

BATTERY PROTECTION IC WITH CHARGE-DISCHARGE CONTROL FUNCTION FOR 1-CELL PACK
Rev.1.1_00
S-82B1A Series
 Battery Protection IC Connection Example
R1
VDD
Battery C1
S-82B1A Series
EB+
R3
CTL
External input
VSS
DO
CO
VM
R2
FET1
FET2
EB−
Figure 15
Table 10 Constants for External Components
Symbol
Part
Purpose
Min.
Typ.
Max.
Remark
FET1
N-channel
MOS FET
Discharge control
−
−
−
Threshold voltage ≤ Overdischarge
detection voltage^*1
FET2
R1
C1
N-channel
MOS FET
Resistor
Charge control
ESD protection,
For power fluctuation
Capacitor For power fluctuation
−
−
270 Ω 330 Ω
0.068 μF 0.1 μF
−
1 kΩ
1.0 μF
Threshold voltage ≤ Overdischarge
detection voltage^*1
Caution should be exercised when
setting VDIOV1 ≤ 30 mV, VCIOV ≥ −30 mV.^*2
Caution should be exercised when
setting VDIOV1 ≤ 30 mV, VCIOV ≥ −30 mV.^*2
ESD protection,
R2
Resistor Protection for reverse
300 Ω 1 kΩ 1.5 kΩ
−
connection of a charger
R3
Resistor CTL pin input protection
−
1 kΩ
−
−
*1. If an FET with a threshold voltage equal to or higher than the overdischarge detection voltage is used, discharging may be
stopped before overdischarge is detected.
*2. When setting V_DIOV1 ≤ 30 mV, V_CIOV ≥ −30 mV for power fluctuation protection, the condition of R1 × C1 ≥ 100 μF • Ω should
be met.
Caution
1. The above constants may be changed without notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above
example of connection. In addition, the example of connection shown above and the constant do not
guarantee proper operation. Perform thorough evaluation using the actual application to set the
constant.
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