S-82B1AAA-I6T1U Datasheet, PDF (7/35 Pages) Seiko Instruments Inc – High-accuracy voltage detection circuit

BATTERY PROTECTION IC WITH CHARGE-DISCHARGE CONTROL FUNCTION FOR 1-CELL PACK
Rev.1.1_00
S-82B1A Series
 Electrical Characteristics
1. Ta = +25°C
Table 8
(Ta = +25°C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Circuit
Detection Voltage
Overcharge detection voltage
VCU
−
Ta = −10°C to +60°C^*1
VCU − 0.020
VCU
VCU + 0.020 V 1
VCU − 0.025
VCU
VCU + 0.025 V 1
Overcharge release voltage
VCL
VCL ≠ VCU
VCL = VCU
Overdischarge detection voltage
VDL
−
Overdischarge release voltage
VDU
VDL ≠ VDU
VDL = VDU
Discharge overcurrent detection voltage 1 VDIOV1
−
Discharge overcurrent detection voltage 2 VDIOV2
−
VCL − 0.050
VCL
VCL + 0.050 V 1
VCL − 0.025
VCL
VCL + 0.020 V 1
VDL − 0.050
VDL
VDL + 0.050 V 2
VDU − 0.100
VDU
VDU + 0.100 V 2
VDU − 0.050
VDU
VDU + 0.050 V 2
VDIOV1 − 0.003 VDIOV1 VDIOV1 + 0.003 V
2
VDIOV2 − 0.005 VDIOV2 VDIOV2 + 0.005 V
2
Load short-circuiting detection voltage
Charge overcurrent detection voltage
Discharge overcurrent release voltage
VSHORT
−
VCIOV
−
VRIOV VDD = 3.4 V
VSHORT − 0.020 VSHORT VSHORT + 0.020 V
2
VCIOV − 0.003
VCIOV
VCIOV + 0.003 V
2
VDD × 0.77 VDD × 0.8 VDD × 0.83 V 2
0 V Battery Charge Function
0 V battery charge starting charger voltage
V0CHA
0 V battery charge function
"available"
0.0
0.7
1.0
V2
0 V battery charge inhibition battery voltage V0INH
0 V battery charge function
"unavailable"
0.9
1.2
1.5
V2
Internal Resistance
Resistance between VDD pin and VM pin
Resistance between VM pin and VSS pin
CTL pin internal resistance
Input Voltage
RVMD
RVMS
RCTL
VDD = 1.8 V, VVM = 0 V
VDD = 3.4 V, VVM = 1.0 V
−
500
5
RCTL × 0.5
1000
10
RCTL
2000
kΩ 3
15
kΩ 3
RCTL × 2.0 MΩ 3
Operation voltage between VDD pin and
VSS pin
VDSOP1
−
1.5
−
6.0
V−
Operation voltage between VDD pin and
VM pin
VDSOP2
−
CTL pin voltage "H"
VCTLH
−
CTL pin voltage "L"
VCTLL
−
1.5
−
28
V−
−
−
VDD × 0.9 V 2
VDD × 0.1
−
−
V2
Input Current
Current consumption during operation
Current consumption during power-down
Current consumption during overdischarge
IOPE
IPDN
IOPED
VDD = 3.4 V, VVM = 0 V
VDD = VVM = 1.5 V
VDD = VVM = 1.5 V
−
2.0
4.0
μA 3
−
−
0.05
μA 3
−
−
0.5
μA 3
Output Resistance
CO pin resistance "H"
CO pin resistance "L"
DO pin resistance "H"
DO pin resistance "L"
RCOH
−
RCOL
−
RDOH
−
RDOL
−
5
10
20
kΩ 4
5
10
20
kΩ 4
5
10
20
kΩ 4
5
10
20
kΩ 4
Delay Time
Overcharge detection delay time
tCU
−
tCU × 0.7
tCU
tCU × 1.3
−5
Overdischarge detection delay time
tDL
−
tDL × 0.7
tDL
tDL × 1.3
−5
Discharge overcurrent detection delay time 1 tDIOV1
−
tDIOV1 × 0.7
tDIOV1
tDIOV1 × 1.3 −
5
Discharge overcurrent detection delay time 2 tDIOV2
−
tDIOV2 × 0.7
tDIOV2
tDIOV1 × 1.3 −
5
Load short-circuiting detection delay time tSHORT
−
tSHORT × 0.7
tSHORT
tSHORT × 1.3 −
5
Charge overcurrent detection delay time
tCIOV
−
tCIOV × 0.7
tCIOV
tCIOV × 1.3
−
5
Charge-discharge inhibition delay time
tCTL
−
tCTL × 0.7
tCTL
tCTL × 1.3
−
5
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by
design, not tested in production.
7