S-8213AAB-I6T1U Datasheet, PDF (7/28 Pages) Seiko Instruments Inc – BATTERY PROTECTION IC FOR 2-SERIAL

Rev.1.3_03
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK (SECONDARY PROTECTION)
S-8213 Series
 Electrical Characteristics
Table 6
(Ta = +25°C unless otherwise specified)
Item
Symbol
Condition
Min. Typ. Max.
Unit
Test
Circuit
DETECTION VOLTAGE
Overcharge detection
voltage n (n = 1, 2, 3)
VCUn
−
Ta = 0°C to +60°C^*1
VCU
− 0.025
VCU
VCU
+ 0.025
V
1
VCU
− 0.030
VCU
VCU
+ 0.030
V
1
Overcharge hysteresis
voltage n (n = 1, 2, 3)
VHCn
VHC = −0.40 V
VHC = 0 V, −0.05 V
VHC
− 0.080
VHC
VHC
+ 0.080
V
1
VHC
− 0.025
VHC
VHC
+ 0.025
V
1
INPUT VOLTAGE
Operation voltage between VDD
and VSS
VDSOP
−
3.6
−
24
V
−
INPUT CURRENT
Current consumption during
operation
IOPE
V1 = V2 = V3 = VCU − 1.0 V
−
−
2.0
μA
3
Current consumption during
overdischarge
IPDN
V1 = V2 = V3 = 2.0 V
−
−
0.3
μA
3
VC1 pin current
IVC1
V1 = V2 = V3 = VCU − 1.0 V
−
−
0.3
μA
4
VC2 pin, VC3 pin current
IVC2, IVC3 V1 = V2 = V3 = VCU − 1.0 V
−0.3
0
0.3
μA
4
OUTPUT CURRENT
CO pin sink current
ICOL
−
0.4
−
−
mA
5
CO pin source current
(CMOS output product)
ICOH
−
20
−
−
μA
5
CO pin leakage current
(Nch open-drain output product)
DELAY TIME
Overcharge detection delay time
Transition time to test mode
ICOLL
tCU
tTST
−
−
−
0.1
μA
5
−
tCU × 0.8 tCU tCU × 1.2
s
1
−
−
−
20
ms
2
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
7