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S-8233B Datasheet, PDF (6/26 Pages) Seiko Instruments Inc – BATTERY PROTECTION IC (FOR A 3-SERIAL-CELL PACK)
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BATTERY PROTECTION IC FOR 3-SERIAL-CELL PACK
S-8233B Series
Rev.4.2_00
„ Electrical Characteristics
Table 4 (1 / 2)
(Ta = 25 °C unless otherwise specified)
Item
Symbol
Condition
Min. Typ.
Max.
Unit
Test
condition
Test
circuit
Detection voltage
Over charge detection voltage 1
VCU1 3.80 to 4.40 Adjustment VCU1-0.025 VCU1 VCU1+0.025 V
1
1
Over charge release voltage 1
VCD1 3.45 to 4.40 Adjustment VCD1-0.10 VCD1 VCD1+0.10 V
1
1
Over discharge detection voltage 1 VDD1 2.00 to 2.80 Adjustment VDD1-0.08 VDD1 VDD1+0.08 V
1
1
Over discharge release voltage 1
VDU1 2.00 to 4.00 Adjustment VDU1-0.10 VDU1 VDU1+0.10 V
1
1
Over charge detection voltage 2
VCU2 3.80 to 4.40 Adjustment VCU2-0.025 VCU2 VCU2+0.025 V
2
1
Over charge release voltage 2
VCD2 3.45 to 4.40 Adjustment VCD2-0.10 VCD2 VCD2+0.10 V
2
1
Over discharge detection voltage 2 VDD2 2.00 to 2.80 Adjustment VDD2-0.08 VDD2 VDD2+0.08 V
2
1
Over discharge release voltage 2
VDU2 2.00 to 4.00 Adjustment VDU2-0.10 VDU2 VDU2+0.10 V
2
1
Over charge detection voltage 3
VCU3 3.80 to 4.40 Adjustment VCU3-0.025 VCU3 VCU3+0.025 V
3
1
Over charge release voltage 3
VCD3 3.45 to 4.40 Adjustment VCD3-0.10 VCD3 VCD3+0.10 V
3
1
Over discharge detection voltage 3 VDD3 2.00 to 2.80 Adjustment VDD3-0.08 VDD3 VDD3+0.08 V
3
1
Over discharge release voltage 3
VDU3 2.00 to 4.00 Adjustment VDU3-0.10 VDU3 VDU3+0.10 V
3
1
Over current detection voltage 1*1
VIOV1 0.15 to 0.50V Adjustment VIOV1×0.9 VIOV1 VIOV1×1.1
V
4
2
Over current detection voltage 2
VIOV2
VCC Reference
0.54 0.6
0.66
V
4
2
Over current detection voltage 3
Voltage temperature factor 1*2
Voltage temperature factor 2*3
VIOV3
TCOE1
TCOE2
VSS Reference
Ta=-20 to 70°C
Ta=-20 to 70°C
1.0
2.0
3.0
V
4
2
-1.0
0
1.0 mV/°C −
−
-0.5
0
0.5 mV/°C −
−
Delay time
Over charge detection delay time 1 tCU1
Over charge detection delay time 2 tCU2
Over charge detection delay time 3 tCU3
Over discharge detection delay time 1 tDD1
Over discharge detection delay time 2 tDD2
Over discharge detection delay time 3 tDD3
Over current detection delay time 1 tIOV1
Over current detection delay time 2 tIOV2
CCCT=0.47 μF
CCCT=0.47 μF
CCCT=0.47 μF
CCDT=0.1 μF
CCDT=0.1 μF
CCDT=0.1 μF
CCOVT=0.1 μF
−
0.5
1.0
1.5
s
9
6
0.5
1.0
1.5
s
10
6
0.5
1.0
1.5
s
11
6
20
40
60
ms
9
6
20
40
60
ms 10
6
20
40
60
ms 11
6
10
20
30
ms 12
7
2
4
8
ms 12
7
Over current detection delay time 3 tIOV3
FET gate capacitor
=2000 pF
100 300
550
μs
12
7
Operating voltage
Operating voltage between VCC and
VSS*4
VDSOP
−
2.0
−
24
V
−
−
Current consumption
Current consumption (during normal
operation)
IOPE
V1=V2=V3=3.5 V
−
20
50
μA
5
3
Current consumption for cell 1
ICELL1
V1=V2=V3=3.5 V
−300
0
300
nA
5
3
Current consumption for cell 2
ICELL2
V1=V2=V3=3.5 V
−300
0
300
nA
5
3
Current consumption for cell 3
ICELL3
V1=V2=V3=3.5 V
−300
0
300
nA
5
3
Current consumption at power down IPDN
V1=V2=V3=1.5 V
−
−
0.1
μA
5
3
Internal resistance with 0V battery charging function type
Resistance between VCC and VMP RVCM V1=V2=V3=3.5 V
0.20 0.50 0.80
MΩ
6
3
Resistance between VSS and VMP RVSM V1=V2=V3=1.5 V
0.20 0.50 0.80
MΩ
6
3
Internal resistance without 0V battery charging function type.
Resistance between VCC and VMP RVCM V1=V2=V3=3.5 V
0.40 0.90 1.40
MΩ
6
3
Resistance between VSS and VMP RVSM V1=V2=V3=1.5 V
0.40 0.90 1.40
MΩ
6
3
Input voltage
CTL"H" Input voltage
VCTL(H)
−
VCC x 0.8 −
−
V
16
1
CTL"L" Input voltage
VCTL(L)
−
−
− VCC x 0.2 V
16
1
6
Seiko Instruments Inc.
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