S93L76A Datasheet, PDF (12/37 Pages) Seiko Instruments Inc – LOW VOLTAGE OPERATION 3-WIRE SERIAL E2PROM

LOW VOLTAGE OPERATION 3-WIRE SERIAL E²PROM
S-93L76A
Rev.6.0_02
2. 2 Erasing data (ERASE)
This instruction is used to erase specified 16-bit data. All the 16 bits of the data are “1”. After making CS
“H”, input a start bit, the ERASE instruction, and an address. It is not necessary to input data. The data
erase operation is started when CS is made “L”.
t_CDS
CS
Verify
Standby
SK
1 2 3 4 5 6 7 8 9 10 11 12 13
DI
<1> 1 1 X A8 A7 A6 A5 A4 A3 A2 A1 A0
High-Z
DO
t_SV
t_HZ1
t_PR
Busy Ready _High-Z
Figure 8 Data Erase Timing
2. 3 Writing to chip (WRAL)
This instruction is used to write the same 16-bit data to the entire address space of the memory.
After making CS “H”, input a start bit, the WRAL instruction, an address, and 16-bit data. Any address may be
input. If data of more than 16 bits is input, the written data is sequentially shifted at each clock, and the 16-bit
data input last is the valid data. The write operation is started when CS is made “L”. It is not necessary to
set the data to “1” before it is written.
t_CDS
CS
Verify
Standby
SK
1 2 3 4 5 6 7 8 9 10 11 12 13 14
29
DI
<1> 0 0 0 1
High-Z
8Xs
DO
D15
D0
t_SV
t_HZ1
t_PR
Busy Ready _High-Z
Figure 9 Chip Write Timing
2. 4 Erasing chip (ERAL)
This instruction is used to erase the data of the entire address space of the memory.
All the data is “1”. After making CS “H”, input a start bit, the ERAL instruction, and an address. Any address
may be input. It is not necessary to input data. The chip erase operation is started when CS is made “L”.
t_CDS
CS
Verify
Standby
SK
1 2 3 4 5 6 7 8 9 10 11 12 13
DI
<1> 0 0 1 0
DO
High-Z
8Xs
t_SV
t_HZ1
t_PR
Busy Ready _High-Z
Figure 10 Chip Erase Timing
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