LPT16ED Datasheet, PDF (4/5 Pages) SiGe Semiconductor, Inc. – 30 GHz SiGe Bipolar Transistor Final

Die and Pad Description
X length
LPT16ED
30 GHz SiGe Bipolar Transistor
Final
Collector
Emitter2
Die edge
Y length
Emitter1
Base
0,0
Dimensions are relative to the 0,0 cut die corner.
Feature
Die thickness
X length
Y length
Pad diameter
Pad pitch
Pad/bump height
Pad/bump co-planarity
Specification
10 mil +/- 1mil
15.3 mil +/- 1mil
14.5 mil +/- 1mil
2.9 mil +/- 0.1mil
6 mil +/- 0.1mil
1 mil +/- 0.05mil
0.2 mil
Comments
Pads are circular.
Pad center to pad centre
Pad Center
Collector
Emitter1
Base
Emitter 2
Position (X mil, Y mil) +/- 0.7mil relative to the 0,0 cut die corner
5, 11
5, 5
11, 5
11, 11
Please refer to Document 01-MS-001 for SiGe’s die inspection criteria.
For S-parameter data, please refer to SiGe Document 07SP001.
38-DST-01 Rev 2.3 Sept 5/02
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