LPT16ED Datasheet, PDF (3/5 Pages) SiGe Semiconductor, Inc. – 30 GHz SiGe Bipolar Transistor Final

LPT16ED
30 GHz SiGe Bipolar Transistor
Final
AC Electrical Characteristics
Symbol
Parameter
Note
IS₂₁I₂
MAG/
MSG
Insertion Power Gain
(Z_S = Z_L = 50Ω)
V_CE = 1.5V, I_C = 10mA,
f = 16GHz
V_CE = 3.0V, I_C = 20mA,
f = 16GHz
Maximum Available
Gain or Maximum Stable
Gain
V_CE = 1.5V, I_C = 10mA,
f = 16GHz
V_CE = 3.0V, I_C = 20mA,
f = 16GHz
Min.
0.7
2.3
3.3
4.9
Typ.
1.0
2.6
3.6
5.2
Max.
1.3
2.9
4.2
5.6
Unit
dB
dB
dB
dB
Typical Performance Characteristics
Please refer to application note (Document 07AN001).
Residual
Phase
Noise
(dBc/Hz)
Typical Measurements @
10 GHz, I_C=5mA, V_CE=1V
Frequency (Hz)
Typical Applications Information
Series or parallel feedback oscillators at 5-16 GHz. (Please refer to application note, Document 07AN001).
38-DST-01 Rev 2.3 Sept 5/02
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