LPT16ED Datasheet, PDF (1/5 Pages) SiGe Semiconductor, Inc. – 30 GHz SiGe Bipolar Transistor Final

LPT16ED
30 GHz SiGe Bipolar Transistor
Final
Applications
Low phase noise oscillators up to 16 GHz
VCO’s, DRO’s and YIG oscillators
Point-to-point radios
Satellite communications
Fiber optics, OC-192 and OC-768
Local Multipoint Distribution Systems, LMDS
Features
Low 1/f noise: -142 dBc/Hz at 100 Hz offset
Phase noise: -167 dBc/Hz at 100 kHz offset
Output power up to +13 dBm
Operation down to 1 volt, 2 mA
Gold bump pads for wire bond or flip chip (for
direct die attachment)
Ordering Information
Type
LPT16ED
Package
Bare Die
Remark
Shipped in
Waffle Pack
Functional Block Diagram
Product Description
The LPT16ED is a silicon germanium low phase
noise, high frequency NPN transistor for oscillator
applications up to 16GHz.
The transistor exhibits low 1/f noise and provides
+13 dBm typical output power at V_CE of 3V and I_C
equal to 20 mA. It is easily operated from a single
supply voltage with appropriate external passive
components.
The silicon germanium technology used in this device
provides outstanding high-frequency performance
combined with high thermal conductivity and superior
reliability under harsh operating and storage
conditions.
A complete mechanical description of the transistor is
available under SiGe Semiconductor Document
07MS001.
C
B
E
38-DST-01 Rev 2.3 Sept 5/02
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