LPT16ED Datasheet, PDF (2/5 Pages) SiGe Semiconductor, Inc. – 30 GHz SiGe Bipolar Transistor Final

LPT16ED
30 GHz SiGe Bipolar Transistor
Final
Absolute Maximum Ratings
Operation in excess of any one of Absolute Maximum Ratings may result in permanent damage. This is a high
performance RF device with ESD rating < 2keV. Handling and assembly of this device should be done at ESD
protected workstations.
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
I_B
P_T
T_j
T_STG
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Min.
-65
Max.
Unit
+13.0
V
+4.0
V
+1.5
V
80
mA
2.0
mA
250
mW
+150
°C
+150
°C
DC Electrical Characteristics
Conditions: T_A = unless otherwise specified 25°C
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
V_BE
Base-emitter voltage
I_C = 1µA
670
687
700
mV
BV_CEO
Collector-emitter
breakdown voltage
Open base
4.0
4.5
5.0
V
BV_CES
Collector-emitter
breakdown voltage
Base-emitter shorted via
100kΩ
14
15.0
16
V
BV_EBO
Emitter-base breakdown I_E = 100µA, open
voltage
collector
2.0
2.3
2.6
V
BV_CBO
Collector-base
breakdown voltage
Open emitter
14
15.0
16
V
V_A
Early voltage
I_C = 10mA, V_CE = 3V
100
200
300
V
I_CBO
Collector-base cutoff
current
V_CB = 5V and I_E = 0
100
pA
I_EBO
Emitter-base cutoff
current
V_EB = 1.5V and I_C = 0
5
10
15
µA
h_FE
DC current gain
V_CE = 2V, I_C = 20mA
50
60
150
38-DST-01 Rev 2.3 Sept 5/02
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