HYM72V8025GS-50- Datasheet, PDF (9/11 Pages) Siemens Semiconductor Group – 8M x 72-Bit EDO- DRAM Module

HYM72V8025/35GS-50/-60
8M x 72-ECC EDO-Module
AC Characteristics (contd’ ) (note: 5,6,7,8)
T_A = 0 to 70 °C,V_CC = 3.3 ± 0.3 V
Parameter
Symbol
-50
min. max.
-60
min. max.
Unit Note
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle time t_PRWC
CAS precharge to WE
t_CPWD
CAS-before-RAS Refresh Cycle
CAS setup time
t_CSR
CAS hold time
t_CHR
RAS to CAS precharge time
t_RPC
Write to RAS precharge time
t_WRP
Write hold time referenced to RAS
t_WRH
Presence Detect Read Cycle
PDE to valid presence detect data
PDE inactive to presence detects
inactive
t_PD
t_PDOFF
60
–
70
–
ns 11
43
–
51
–
ns 11,21
12
–
12
–
ns 11
8
–
8
– ns 10
5
–
5
– ns
12
–
12
– ns 11
8
–
8
– ns 10
–
10
–
10 ns
0
10
0
10 ns
Semiconductor Group
9