HYM72V8025GS-50- Datasheet, PDF (7/11 Pages) Siemens Semiconductor Group – 8M x 72-Bit EDO- DRAM Module

HYM72V8025/35GS-50/-60
8M x 72-ECC EDO-Module
AC Characteristics (note: 5,6,7,8)
T_A = 0 to 70 °C,V_CC = 3.3 ± 0.3 V
Parameter
Symbol
-50
-60
Unit Note
min. max. min. max.
common parameters
Random read or write cycle time
t_RC
RAS precharge time
t_RP
RAS pulse width
t_RAS
CAS pulse width
t_CAS
Row address setup time
t_ASR
Row address hold time
t_RAH
Column address setup time
t_ASC
Column address hold time
t_CAH
RAS to CAS delay time
t_RCD
RAS to column address delay time
t_RAD
RAS hold time
t_RSH
CAS hold time
t_CSH
CAS to RAS precharge time
t_CRP
Transition time (rise and fall)
t_T
Refresh period
t_REF
Read Cycle
Access time from RAS
t_RAC
Access time from CAS
t_CAC
Access time from column address
t_AA
OE access time
t_OEA
Column address to RAS lead time
t_RAL
Read command setup time
t_RCS
Read command hold time
t_RCH
Read command hold time referenced t_RRH
to RAS
CAS to output in low-Z
t_CLZ
Output buffer turn-off delay
t_OFF
84
–
104 – ns
30
–
40
– ns
50 100k 60 100k ns
8 10k 10 10k ns
5
–
5
– ns 9
6
–
8
–
ns 10
2
–
2
–
ns 11
13
–
15
–
ns 9
10 32 12 40
12
8
20 10 25 ns 12
18
–
20
–
ns 9
38
–
48
–
ns 10
10
–
10
–
ns 9
1
30
1
30 ns 7
–
64
–
64 ms
–
50
–
60 ns 13,14
–
18
–
20
ns ^9,13,14
–
30
–
35
ns ^{9,13, 15}
–
18
–
20 ns 9,13
30
–
35
–
ns 9
2
–
2
–
ns 11
2
–
2
–
ns 11,16
0
–
0
–
ns 16
2
–
2
–
ns 11,13
–
18
–
20 ns 9,17
Semiconductor Group
7