HYM72V8025GS-50- Datasheet, PDF (8/11 Pages) Siemens Semiconductor Group – 8M x 72-Bit EDO- DRAM Module

HYM72V8025/35GS-50/-60
8M x 72-ECC EDO-Module
AC Characteristics (contd’ ) (note: 5,6,7,8)
T_A = 0 to 70 °C,V_CC = 3.3 ± 0.3 V
Parameter
Symbol
-50
min. max.
Output buffer turn-off delay from OE t_OEZ
CAS delay time from Din
t_DZC
Data to OE low delay
t_DZO
CAS high to data delay
t_CDD
OE high to data delay
t_ODD
–
18
0
–
0
–
15
–
15
–
-60
min. max.
–
20
0
–
0
–
18
–
18
–
Unit Note
ns 9,17
ns 18
ns 18
ns 9,19
ns 9,19
Write Cycle
Write command hold time
t_WCH
Write command pulse width
t_WP
Write command setup time
t_WCS
Write command to RAS lead time
t_RWL
Write command to CAS lead time
t_CWL
Data setup time
t_DS
Data hold time
t_DH
13
–
15
–
ns 9
8
–
10
– ns
2
–
2
–
ns 11,20
18
–
20
–
ns 9
13
–
15
– ns
-2
–
-2
–
ns 10,21
13
–
15
–
ns 9,21
Read-Modify-Write Cycle
Read-write cycle time
t_RWC
RAS to WE delay time
t_RWD
CAS to WE delay time
t_CWD
Column address to WE delay time
t_AWD
OE command hold time
t_OEH
118 – 143 – ns 9
66
–
77
–
ns 11,21
29
–
34
–
ns 11,21
41
–
49
–
ns 11,21
8
–
11
– ns 10
Hyper Page Mode (EDO) Cycle
Fast page mode cycle time
CAS precharge time
Access time from CAS precharge
Output data hold time
RAS pulse width
CAS precharge to RAS Delay
OE setup time prior to CAS
t_PC
t_CP
t_CPA
t_COH
t_RAS
t_RHCP
t_OES
20
–
25
– ns
8
–
10
– ns
–
32
–
37 ns 9,13
3
–
3
–
ns 10
50 200k 60 200k ns
32
–
37
–
ns 9
5
–
5
– ns
Semiconductor Group
8