HYB5118160BSJ-50- Datasheet, PDF (9/24 Pages) Siemens Semiconductor Group – 1M x 16-Bit Dynamic RAM 1k Refresh

HYB 5118160BSJ-50/-60
HYB 3118160BSJ-50/-60
1M × 16 DRAM
AC Characteristics (cont’d) ^{5, 6}
T_A = 0 to 70 °C, V_CC = 5 V ± 10 % / V_CC = 3.3 V ± 0.3 V, t_T = 5 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min. max. min. max.
Access time from CAS precharge
RAS pulse width
CAS precharge to RAS Delay
t_CPA
t_RAS
t_RHPC
–
30 –
35 ns ⁷
50 200k 60 200k ns
30 –
35 –
ns
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle time
CAS precharge to WE
t_PRWC
71 –
80 –
ns
t_CPWD
48 –
55 –
ns
CAS-before-RAS Refresh Cycle
CAS setup time
CAS hold time
RAS to CAS precharge time
Write to RAS precharge time
Write hold time referenced to RAS
t_CSR
t_CHR
t_RPC
t_WRP
t_WRH
10 –
10 –
ns
10 –
10 –
ns
5
–
5
–
ns
10 –
10 –
ns
10 –
10 –
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
t_CPT
35 –
40 –
ns
Semiconductor Group
9
1998-10-01