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HYB5118160BSJ-50- Datasheet, PDF (6/24 Pages) Siemens Semiconductor Group – 1M x 16-Bit Dynamic RAM 1k Refresh | |||
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HYB 5118160BSJ-50/-60
HYB 3118160BSJ-50/-60
1M Ã 16 DRAM
DC Characteristics (contâd)
TA = 0 to 70 °C, VSS = 0 V, tT = 2 ns
Parameter
Symbol
Limit Unit
Values
min. max.
Common Parameters
Input leakage current
II(L)
(0 V ⤠VIH ⤠VCC + 0.3 V, all other pins = 0 V)
Output leakage current
IO(L)
(DO is disabled, 0 V ⤠VOUT ⤠VCC + 0.3 V)
Average VCC supply current
ICC1
-50 ns version
-60 ns version
(RAS, CAS, address cycling: tRC = tRC MIN.)
Standby VCC supply current (RAS = CAS = VIH)
ICC2
Average VCC supply current, during RAS-only refresh ICC3
cycles
-50 ns version
-60 ns version
(RAS cycling, CAS = VIH, tRC = tRC MIN.)
Average VCC supply current, during fast page mode ICC4
-50 ns version
-60 ns version
(RAS = VIL, CAS, address cycling: tPC = tPC MIN.)
Standby VCC supply current
ICC5
(RAS = CAS = VCC â 0.2 V)
Average VCC supply current, during CAS-before-RAS ICC6
refresh mode
-50 ns version
-60 ns version
(RAS, CAS cycling: tRC = tRC MIN.)
â 10 10 µA
â 10 10 µA
â
130 mA
â
115 mA
â
2
mA
â
130 mA
â
115 mA
â
40 mA
â
30 mA
â
1
mA
â
130 mA
â
115 mA
Notes
1
1
2, 3, 4
2, 3, 4
â
2, 4
2, 4
2, 3, 4
2, 3, 4
1
2, 4
2, 4
Semiconductor Group
6
1998-10-01
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