HYB5118160BSJ-50- Datasheet, PDF (2/24 Pages) Siemens Semiconductor Group – 1M x 16-Bit Dynamic RAM 1k Refresh

HYB 5118160BSJ-50/-60
HYB 3118160BSJ-50/-60
1M × 16 DRAM
The HYB 5(3)118160 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized
as 1 048 576 words by 16-bits. The HYB 5(3)118)160 utilizes a submicron CMOS silicon gate
process technology, as well as advanced circuit techniques to provide wide operating margins, both
internally and for the system user. Multiplexed address inputs permit the HYB 5(3)118160 to be
packaged in a standard SOJ-42 plastic package with 400 mil width. This package provide high
system bit densities and is compatible with commonly used automatic testing and insertion
equipment.
Ordering Information
Type
HYB 5118160BSJ-50
HYB 5118160BSJ-60
HYB 3118160BSJ-50
HYB 3118160BSJ-60
Ordering Code
Q67100-Q1072
Q67100-Q1073
on request
on request
Package
P-SOJ-42-1 400 mil
P-SOJ-42-1 400 mil
P-SOJ-42-1 400 mil
P-SOJ-42-1 400 mil
Descriptions
5 V 50 ns FPM-DRAM
5 V 60 ns FPM-DRAM
3.3 V 50 ns FPM-DRAM
3.3 V 60 ns FPM-DRAM
Pin Names
Row Address Inputs
Column Address Inputs
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Output Enable
Data Input/Output
Read/Write Input
Power Supply
Ground (0 V)
Not Connected
HYB 5(3)118160
A0 - A9
A0 - A9
RAS
UCAS
LCAS
OE
I/O1 - I/O16
WE
V_CC
V_SS
N.C.
Semiconductor Group
2
1998-10-01