HYB3164165AT Datasheet, PDF (9/29 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
DC-Characteristics (cont’d)
T_A = 0 to 70 °C, V_SS = 0 V, V_CC = 3.3 V ± 0.3 V
Parameter
Symbol
refresh version
2k
4k
8k
Operating Current
I_CC1
-40 ns version
-50 ns version
-
-60 ns version
(RAS, CAS, address cycling: tRC = tRC min.)
280 170 125
230 140 100
185 115
85
Standby Current (RAS=CAS= Vih)
I_CC2
RASOnly Refresh Current:
-
I_CC3
-40 ns version
-50 ns version
-60 ns version
(RAS cycling: CAS = VIH: tRC = tRC min.)
2
2
2
280 170 125
230 140 100
185 115
84
Hyper Page Mode (EDO) Current:
I_CC4
-40 ns version
-50 ns version
-60 ns version
(RAS = V_IL, CAS, address cycling: tHPC=tHPC min.)
Standby Current (RAS=CAS= Vcc-0.2V)
I_CC5
Standby Current (L-Version)
I_CC5
(RAS=CAS= Vcc-0.2V)
140 140 140
105 105 105
85
85
85
900 900 900
200 200 200
CAS Before RAS Refresh Current
I_CC6
-40 ns version
-50 ns version
-60 ns version
(RAS, CAS cycling: tRC = tRC min.)
280 170 170
230 140 140
185 115 115
Self Refresh Current (L-version only)
I_CC7
(CBR cycle with tRAS>TRASSmin, CAS held low,
WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
400 400 400
Unit Note
mA 2) 3)
mA 4)
mA
mA –
mA 2) 4)
mA
mA
mA 2) 3)
mA 4)
mA
µA –
µA –
mA 2) 4)
mA
mA
µA
Capacitance
T_A = 0 to 70 °C,V_CC = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Input capacitance (A0 to A11,A12)
Input capacitance (RAS, CAS, WE, OE)
I/O capacitance (I/O1-I/O16)
Symbol
C_I1
C_I2
C_IO
Limit Values
min.
max.
–
5
–
7
–
7
Unit
pF
pF
pF
Semiconductor Group
9