HYB3164165AT Datasheet, PDF (2/29 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
This device is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated on
an advanced first generation 64Mbit 0,35 µm CMOS silicon gate process technology. The circuit
and process design allow this device to achieve high performance and low power dissipation. The
HYB3164(5)165AT operates with a single 3.3 +/-0.3V power supply and interfaces with either
LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB3164(5/6)165AT to be
packaged in 400mil wide TSOPII-50 package. These packages provide high system bit densities
and are compatible with commonly used automatic testing and insertion equipment. The
HYB3164(5/6)165ATL parts have a very low power „sleep mode“ supported by Self Refresh.
Ordering Information
Type
8k-refresh versions:
HYB 3164165AT-40
HYB 3164165AT-50
HYB 3164165AT-60
HYB 3164165ATL-50
HYB 3164165ATL-60
4k-refresh versions:
HYB 3165165AT-40
HYB 3165165AT-50
HYB 3165165AT-60
HYB 3165165ATL-50
HYB 3165165ATL-60
2k-refresh versions:
HYB 3166165AT-40
HYB 3166165AT-50
HYB 3166165AT-60
HYB 3166165ATL-50
HYB 3166165ATL-60
Ordering
Code
Package
Descriptions
P-TSOPII-50
P-TSOPII-50
P-TSOPII-50
P-TSOPII-50
P-TSOPII-50
400 mil
400 mil
400 mil
400 mil
400 mil
EDO-DRAM (access time 40 ns)
EDO-DRAM (access time 50 ns)
EDO-DRAM (access time 60 ns)
EDO-DRAM (access time 50 ns)
EDO-DRAM (access time 60 ns)
P-TSOPII-50
P-TSOPII-50
P-TSOPII-50
P-TSOPII-50
P-TSOPII-50
400 mil
400 mil
400 mil
400 mil
400 mil
EDO-DRAM (access time 40 ns)
EDO-DRAM (access time 50 ns)
EDO-DRAM (access time 60 ns)
EDO-DRAM (access time 50 ns)
EDO-DRAM (access time 60 ns)
P-TSOPII-50
P-TSOPII-50
P-TSOPII-50
P-TSOPII-50
P-TSOPII-50
400 mil
400 mil
400 mil
400 mil
400 mil
EDO-DRAM (access time 40 ns)
EDO-DRAM (access time 50 ns)
EDO-DRAM (access time 60 ns)
EDO-DRAM (access time 50 ns)
EDO-DRAM (access time 60 ns)
Semiconductor Group
2